Quantum well

About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.

Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices

Abstract: Modulation spectroscopy is a powerful method for the study and characterization of a large number of semiconductor configurations, including bulk/thin film, microstructures (heterojunctions, quantum wells, superlattices, quantum dots), surfaces/interfaces and actual device structures in addition to semiconductor growth/processing. Furthermore, the influence of external perturbations such as temperature, electric fields, hydrostatic pressure, uniaxial stress, etc. can be investigated. This optical technique utilizes a very general principle of experimental physics, in which a periodically applied perturbation (either to the sample or probe) leads to sharp, derivative-like spectral features in the optical response of the system. Because of the richness of the derivative-like spectra, the information in the lineshape fits, room temperature performance and relative simplicity of operation this method is becoming increasingly more important as a tool to study these materials and structures. This article will review developments in the field during the last decade.

1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

Abstract: Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 μm InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 °C. 1.3 μm ground state lasing is obtained up to a temperature of 167 °C.

Low-Threshold Photonic Crystal Laser

Abstract: We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 μW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions.

Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Abstract: When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic are utilized for growing high-quality GaAs and AlAs layers at very low temperatures by alternately supplying Ga or Al atoms and As4 molecules to the GaAs substrate. Applying this method, GaAs layers and AlAs–GaAs quantum well structures with reasonable photoluminescence characteristics are grown at 200°C and 300°C, respectively.