Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
Papers published on a yearly basis
Papers
More filters
TL;DR: A range of techniques, based on impurity diffusion, dielectric capping and laser annealing, have been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer as discussed by the authors.
Abstract: Intermixing the wells and barriers of quantum well structures generally results in an increase in the band gap and is accompanied by changes in the refractive index. A range of techniques, based on impurity diffusion, dielectric capping and laser annealing has been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer; such processes offer the prospect of a powerful and relatively simple fabrication route for integrating optoelectronic devices and for forming photonic integrated circuits (PICS). Recent progress in QWI techniques is reviewed, concentrating on processes which are compatible with PIC applications, in particular the achievement of low optical propagation losses.
317 citations
TL;DR: In this article, a 3-nm InGaN/GaN quantum well (QW) is positioned 12 nm from an 8-nm silver layer, well within the surface plasmon fringing field depth.
Abstract: The coincidence in excitation energy between surface plasmons on silver and the GaN band gap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. A 3-nm InGaN/GaN quantum well (QW) is positioned 12 nm from an 8-nm silver layer, well within the surface plasmon fringing field depth. A spectrally sharp photoluminescence dip, by a factor \ensuremath{\approx}55, indicates that electron-hole energy is being rapidly transferred to plasmon excitation, due to the spatial overlap between the semiconductor QW and the surface plasmon electric field. Thus, spontaneous emission into surface plasmons is \ensuremath{\approx}55 times faster than normal spontaneous emission from InGaN quantum wells. If efficient antenna structures can be incorporated into the metal film, there could be a corresponding increase in external light emission efficiency.
316 citations
TL;DR: In this article, a negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region is proposed.
Abstract: We propose a new negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region. The key difference compared to previously studied structures is that resonant tunneling is achieved by high‐energy minority carrier injection into the quantum state rather than by application of an electric field. Thus this novel geometry maintains the crucial, structural symmetry of the double barrier, allowing unity transmission at all resonance peaks and higher peak‐to‐valley ratios and currents compared to conventional resonant tunneling structures. Both tunneling and ballistic injection in the base are considered. These new functional devices have significant potential for a variety of signal processing and multiple‐valued logic applications and for the study of the physics of transport in superlattices.
314 citations
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.
Abstract: Design considerations for fabricating highly efficient uncooled semiconductor lasers are discussed. The parameters investigated include the temperature characteristics of threshold current, quantum efficiency, and modulation speed. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP material system instead of the conventional Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y//InP material system. To reduce the transparency current and the carrier-density-dependent loss due to the intervalence-band absorption, strained-layer quantum wells are chosen as the active layer. Experimentally, 1.3-/spl mu/m compressive-strained five-quantum-well lasers and tensile-strained three-quantum-well lasers were fabricated using a 3-/spl mu/m wide ridge-waveguide laser structure. For both types of lasers, the intrinsic material parameters are found to be similar in magnitude and in temperature dependence if they are normalized to each well. Specifically, the compressive-strained five-quantum-well lasers show excellent extrinsic temperature characteristics, such as small drop of 0.3 dB in differential quantum efficiency when the heat sink temperature changes from 25 to 100/spl deg/C, and a large small-signal modulation bandwidth of 8.6 GHz at 85/spl deg/C. The maximum 3 dB modulation bandwidth was measured to be 19.6 GHz for compressive-strained lasers and 17 GHz for tensile-strained-lasers by an optical modulation technique. The strong carrier confinement also results in a small k-factor (0.25 ns) which indicates the potential for high-speed modulation up to 35 GHz. In spite of the aluminum-containing active layer, no catastrophic optical damage was observed at room temperature up to 218 mW for compressive-strained five-quantum-well lasers and 103 mW for tensile-strained three-quantum-well lasers. For operating the compressive-strained five-quantum-well lasers at 85/spl deg/C with more than 5 mW output power, a mean-time-to-failure (MTTF) of 9.4 years is projected from a preliminary life test. These lasers are highly attractive for uncooled, potentially low-cost applications in the subscriber loop. >
310 citations
TL;DR: The nonlinear optical phenomena are expected to have a fast response time of a picosecond in GaAs quantum wells and a subpicose Cond in CdS quantum wells through the short lifetime of excitons.
Abstract: An exciton has a macroscopic transition dipole moment because it is a coherent excitation over the whole crystal. The interaction of this exciton with a radiation field, which results in a polariton in a bulk crystal, brings about the rapid radiative decay of the exciton in low-dimensional systems due to breakdown of the translational symmetry. This large decay constant at the same time makes the excitons deviate from ideal bosons so that we have a large third-order optical susceptibility enhanced by the macroscopic transition dipole moment under near-resonant excitation. The nonlinear optical phenomena are expected to have a fast response time of a picosecond in GaAs quantum wells and a subpicosecond in CdS quantum wells through the short lifetime of excitons.
307 citations