Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, the infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate, and the electronic level structure was determined, based on polarization, bias, and temperature dependence of the transitions.
Abstract: Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate.
256 citations
TL;DR: In this paper, room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities.
Abstract: Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency (IQE) as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density (5.3×108 cm−2) is as high as 64%. The measured nonradiative coefficient A varies from 6×107 to 2×108 s−1 as the dislocation density increases from 5.3×108 to 5.7×109 cm−2, respectively.
256 citations
TL;DR: In this paper, a dual-wavelength quantum cascade laser was designed to combine the advantages of electrically pumped semiconductor lasers and nonlinear optical sources. But it requires powerful laser pumps and a more complicated optical set-up, resulting in bulky and unwieldy sources.
Abstract: The terahertz spectral range (λ = 30–300 µm) has long been devoid of compact, electrically pumped, room-temperature semiconductor sources1,2,3,4. Despite recent progress with terahertz quantum cascade lasers2,3,4, existing devices still require cryogenic cooling. An alternative way to produce terahertz radiation is frequency down-conversion in a nonlinear optical crystal using infrared or visible pump lasers5,6,7. This approach offers broad spectral tunability and does work at room temperature; however, it requires powerful laser pumps and a more complicated optical set-up, resulting in bulky and unwieldy sources. Here we demonstrate a monolithically integrated device designed to combine the advantages of electrically pumped semiconductor lasers and nonlinear optical sources. Our device is a dual-wavelength quantum cascade laser8 with the active region engineered to possess giant second-order nonlinear susceptibility associated with intersubband transitions in coupled quantum wells. The laser operates at λ1 = 7.6 µm and λ2 = 8.7 µm, and produces terahertz output at λ = 60 µm through intracavity difference-frequency generation.
255 citations
TL;DR: In this paper, a self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped laser and to analyze the measured data.
Abstract: Temperature invariant output slope efficiency and threshold current (T0=∞) in the temperature range of 5–75 °C have been measured for 1.3 μm p-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T0=69K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the p-doped lasers.
255 citations
TL;DR: The absence of band-gap renormalization in the laser emission indicates a marked increase in the stability of the exciton in one dimension.
Abstract: Stimulated optical emission from the lowest exciton state in atomically smooth semiconductor quantum wires is observed for the first time. The wires are formed by the ssT intersection of two 7 nm GaAs quantum wells. The optical emission wavelength is nearly independent of pump levels. This absence of band-gap renormalization in the laser emission indicates a marked increase in the stability of the exciton in one dimension.
255 citations