Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: The improvement in the maximum operating temperature is achieved by using a three-quantum-well active region design with resonant-phonon depopulation and by utilizing copper, instead of gold, for the cladding material in the metal-metal waveguides.
Abstract: We report terahertz quantum cascade lasers operating in pulsed mode at an emission frequency of 3 THz and up to a maximum temperature of 178 K. The improvement in the maximum operating temperature is achieved by using a three-quantum-well active region design with resonant-phonon depopulation and by utilizing copper, instead of gold, for the cladding material in the metal-metal waveguides.
215 citations
TL;DR: In this paper, a 1.3/spl mu/m continuous wave lasing operation was demonstrated in a GaInNAs quantum-well laser at room temperature, which was achieved by increasing the nitrogen content (up to 1%) in the quantum layer.
Abstract: A 1.3-/spl mu/m continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications.
214 citations
TL;DR: A hybrid laser that combines silicon photonic-crystal reflectors with transfer-printed InGaAsP quantum wells offers a convenient means of realizing surface-emitting lasers on silicon.
Abstract: A hybrid laser that combines silicon photonic-crystal reflectors with transfer-printed InGaAsP quantum wells offers a convenient means of realizing surface-emitting lasers on silicon.
213 citations
TL;DR: By reducing the dark-spot density to <3/spl times/10/sup 3/ cm/sup -2, a device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe -ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW as mentioned in this paper.
Abstract: By reducing the dark-spot density to <3/spl times/10/sup 3/ cm/sup -2/, device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe-ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW The threshold current density is 533 A/cm/sup 2/ and the lasing wavelength is 5147 nm Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reaction
213 citations
TL;DR: In this article, the binding energy of the free excitons in GaAs is increased by using a superlattice etalon, and the switching times are 20-40 ns.
Abstract: The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice etalon. The superlattice consists of 61 periods of 336 A GaAs and 401 A Ga0.73Al0.27As. The intensities required are about 1 mW/ ( μm)2 and the switching times are 20–40 ns, similar to the low‐temperature pure GaAs values. Room‐temperature operation of semiconductor etalons enhances the likelihood of all‐optical logic and switching.
213 citations