Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, the crystal orientation dependence of n− and p−type Si doping in molecular beam epitaxial GaAs was investigated and high electron and hole mobilities in AlGaAs/GaAs heterostructures on high index planes were demonstrated for the first time.
Abstract: Results on crystal orientation dependence of n‐ and p‐type Si doping in molecular beam epitaxial GaAs are presented. High electron and hole mobilities in AlGaAs/GaAs heterostructures on high index planes are demonstrated for the first time. The doping results should prove useful for various transistor structures and complementary circuits. Also, due to the differences in the band structure for different orientations, quantum well heterostructures are likely to exhibit many interesting phenomena which are strongly orientation dependent.
207 citations
01 Oct 2010
TL;DR: In this paper, a self-consistent 6-band k ǫ p method is used to calculate the band structure for InGaN single quantum well (QW) based light-emitting diodes (LEDs).
Abstract: Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k · p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24-A In 0.28 Ga 0.72 N–GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24-A In 0.28 Ga 0.72 N QW with 15-A Al 0.1 Ga 0.9 N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15-A Al 0.83 In 0.17 N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm 2 ). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.
207 citations
207 citations
TL;DR: In this paper, the magnitude of the longitudinal electric field induced by both spontaneous and piezoelectric polarizations was determined by comparing experimental results with a variational calculation of excitonic energies and oscillator strengths.
Abstract: Continuous-wave, time-integrated, and time-resolved photoluminescence experiments are used to study the excitonic optical recombinations in wurtzite ZnO/Zn078Mg022O quantum wells of varying widths By comparing experimental results with a variational calculation of excitonic energies and oscillator strengths, we determine the magnitude (09MV∕cm) of the longitudinal electric field that is induced by both spontaneous and piezoelectric polarizations The quantum-confined Stark effect counteracts quantum confinement effects for well widths larger than 3nm, leading to emission energies that can lie 05eV below the ZnO excitonic gap and to radiative lifetimes that can be larger than milliseconds
206 citations
TL;DR: In this paper, a quantum cascade detector (QCD) was proposed for photovoltaic inter-subband detector based on electron transfer on a cascade of quantum levels, and the highest photoresponse of inter-band transition-based photovellaic detectors is demonstrated: 35mA∕W at null bias.
Abstract: A photovoltaic intersubband detector based on electron transfer on a cascade of quantum levels is presented: A quantum cascade detector (QCD). The highest photoresponse of intersubband transition-based photovoltaic detectors is demonstrated: 35mA∕W at null bias. The deduced absorption is of the same order of magnitude as that of a classical quantum-well infrared photodetector, i.e., 20%. Because they work with no dark current, QCDs are very promising for small-pixel large focal plane array applications.
205 citations