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Quantum well

About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.


Papers
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Journal ArticleDOI
TL;DR: The edge conductance of a QSH insulator as a function of temperature in the presence of a magnetic impurity is calculated using linear response and renormalization group methods.
Abstract: Following the recent observation of the quantum spin Hall (QSH) effect in HgTe quantum wells, an important issue is to understand the effect of impurities on transport in the QSH regime. Using linear response and renormalization group methods, we calculate the edge conductance of a QSH insulator as a function of temperature in the presence of a magnetic impurity. At high temperatures, Kondo and/or two-particle scattering give rise to a logarithmic temperature dependence. At low temperatures, for weak Coulomb interactions in the edge liquid, the conductance is restored to unitarity with unusual power laws characteristic of a "local helical liquid," while for strong interactions, transport proceeds by weak tunneling through the impurity where only half an electron charge is transferred in each tunneling event.

191 citations

Journal ArticleDOI
TL;DR: This study reports the unequivocal demonstration of midinfrared mode-locked pulses from quantum cascade lasers generated by actively modulating the current and hence the gain of an edge-emitting quantum cascade laser (QCL).
Abstract: In this study, we report the unequivocal demonstration of midinfrared mode-locked pulses from quantum cascade lasers. The train of short pulses was generated by actively modulating the current and hence the gain of an edge-emitting quantum cascade laser (QCL). Pulses with duration of about 3 ps at full-width-at-half-maxima and energy of 0.5 pJ were characterized using a second-order interferometric autocorrelation technique based on a nonlinear quantum well infrared photodetector. The mode-locking dynamics in the QCLs was modeled based on the Maxwell-Bloch equations in an open two-level system. Our model reproduces the overall shape of the measured autocorrelation traces and predicts that the short pulses are accompanied by substantial wings as a result of strong spatial hole burning. The range of parameters where short mode-locked pulses can be formed is found.

191 citations

Journal ArticleDOI
TL;DR: In this article, the photoluminescence of nominally undoped quantum wells is studied as a function of temperature and excitation power, and the role of an excitonic process in 4K radiative recombinations is pointed out.
Abstract: The properties of InGaAs‐InP single quantum wells have been studied by using the photoluminescence technique. Samples were grown by atmospheric pressure metalorganic vapor phase epitaxy. The photoluminescence of nominally undoped quantum wells is studied as a function of temperature and excitation power. The role of an excitonic process in 4‐K radiative recombinations is pointed out. The best linewidth obtained for a 140‐A well is 4.5 meV, fairly close to the limit imposed by alloy fluctuations in the InGaAs thick layers. Radiative recombination is more and more efficient with decreasing well thickness and higher than in InGaAs bulk material.

190 citations

Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate that even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm.
Abstract: We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm. These fields, resulting from the interplay of the piezoelectric and spontaneous polarizations in the well and barrier layers due to Fermi level alignment, induce large redshifts of the photoluminescence energy position and dramatically increase the carrier lifetime as the quantum well thickness increases.

190 citations

Journal ArticleDOI
TL;DR: In this article, the authors examined the dynamic properties of high-aspect-ratio InAs-quantum-dot (QD) laser at room temperature and found that low chirp in the lasing wavelength under 1-GHz current modulation was found in the quantum dot lasers.
Abstract: We have examined the dynamic properties of high-aspect-ratio InAs-quantum-dot (QD) lasers at room temperature. A novel characteristic of low chirp in the lasing wavelength under 1-GHz current modulation was found in the quantum dot lasers. This is more than one order of magnitude less than the typical chirp (0.2-nm) found in a conventional quantum well laser that we used as a reference. Low chirp was obtained not only in the ground state lasing but in the second level lasing of quantum dots as well.

190 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023262
2022615
2021560
2020712
2019859
2018891