Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, the critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells was calculated to be T5460 K.
Abstract: The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.
173 citations
TL;DR: In this article, a waveguide with a doubly periodic grating coupler was used to achieve a quantum efficiency of 92% with respect to unpolarized radiation, with a response linewidth of 0.8 μm.
Abstract: Quantum well infrared detectors based on a waveguide with a doubly periodic grating coupler are shown to provide quantum efficiencies of nearly unity with respect to unpolarized polarization. This is a factor of six larger than for a conventional 45° polished edge detector with the same quantum well characteristics. As a further advantage the detector response becomes nearly insensitive to the polarization direction of the incident radiation. Detectors have been fabricated and tested. Measurements lead to a maximum quantum efficiency of 92% with respect to unpolarized radiation, with a response linewidth =0.8 μm, thus confirming theory.
172 citations
TL;DR: In this article, a three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing a graded growth-temperature profile.
Abstract: Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8–2.8 and 2.0–3.5 times, respectively, over those of conventional InGaN QW LED.
172 citations
TL;DR: In this article, the basic features of ISB transitions in III-nitride quantum wells and quantum dots are described in terms of theoretical calculations, material growth, spectroscopy, resonant transport phenomena, and device implementation.
Abstract: III-nitride nanostructures have recently emerged as promising materials for new intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on infrared optical transitions between quantum-confined electronic states in the conduction band of GaN/Al(Ga)N nanostructures, namely quantum wells or quantum dots. The large conduction band offset (about 1.8 eV for GaN/AlN) and sub-picosecond ISB relaxation of III-nitrides render them appealing materials for ultrafast photonic devices in near-infrared telecommunication networks. Furthermore, the large energy of GaN longitudinal-optical phonons (92 meV) opens prospects for high-temperature THz quantum cascade lasers and ISB devices covering the 5?10 THz band, inaccessible to As-based technologies due to phonon absorption. In this paper, we describe the basic features of ISB transitions in III-nitride quantum wells and quantum dots, in terms of theoretical calculations, material growth, spectroscopy, resonant transport phenomena, and device implementation. The latest results in the fabrication of control-by-design devices such as all-optical switches, electro-optical modulators, photodetectors, and lasers are also presented.
171 citations
TL;DR: In this article, a method for calculating the electronic states and optical properties of multidimensional semiconductor quantum structures is described, which is applicable to heterostructures with confinement in any number of dimensions: e.g. bulk, quantum wells, quantum wires and quantum dots.
Abstract: A method for calculating the electronic states and optical properties of multidimensional semiconductor quantum structures is described. The method is applicable to heterostructures with confinement in any number of dimensions: e.g. bulk, quantum wells, quantum wires and quantum dots. It is applied here to model bulk and multiquantum well (MQW) InGaAsP active layer quaternary lasers. The band parameters of the quaternary system required for the modeling are interpolated from the available literature. We compare bulk versus MQW performance, the effects of compressive and tensile strain, room temperature versus high temperature operation and 1.3 versus 1.55 pm wavelength operation. Our model shows that: compressive strain improves MQW laser performance. MQW lasers have higher amplification per carrier and higher differential gain than bulk lasers, however, MQW performance is far from ideal because of occupation of non-lasing minibands. This results in higher carrier densities at threshold than in bulk lasers, and may nullify the advantage of MQW lasers over bulk devices for high temperature operation. >
171 citations