Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this paper, a review of recent achievements in the fabrication of diode lasers for the near-infrared range on GaAs substrates is presented, including material growth, optical properties and laser characteristics.
Abstract: The present paper reviews recent achievements in the fabrication of diode lasers for the near-infrared range on GaAs substrates. 1.3??m light emitters are currently widely used in fibre-optic communication systems. GaAs-based devices are potentially advantageous compared to their InGaAsP counterparts in several aspects, such as improvement of thermal stability, possibility to grow vertical-cavity surface-emitting lasers in a single growth run and the use of large-area high-quality inexpensive GaAs substrates. Three main approaches have been suggested so far to achieve the 1.3??m emission from structures grown on GaAs substrates. They are InGaAs and GaAsSb quantum wells, GaInAsN quantum wells and InAs/GaAs quantum dots. In the present paper we discuss all these approaches including material growth, optical properties and laser characteristics. The results obtained by these methods are compared and their potential advantages discussed.
171 citations
TL;DR: In this paper, the authors examined the correlation of the interface roughness with the measured intensity oscillations of reflective high energy electron diffraction (RHEED) during the growth of 10 or more atomic layers and found that the growth interruption of 10−100 seconds prior to the interface formation is effective in achieving an atomically flat interface.
Abstract: Photoluminescence spectra of GaAs-AlAs quantum wells are studied to evaluate the flatness of heterointerfaces prepared by molecular beam epitaxy. We examine the correlation of the interface roughness with the measured intensity oscillations of reflective high energy electron diffraction (RHEED) during the growth. The crystal surface is found to roughen after the growth of 10 or more atomic layers. The growth interruption of 10–100 seconds prior to the interface formation is effective in achieving an atomically flat interface, leading to sharp photoluminescence with the linewidth <30 A at 77 K even when the quantum well width is reduced to 40 A.
170 citations
TL;DR: In this article, a quantum cascade laser at λ = 4.6 μm was reported to operate in continuous wave operation at liquid nitrogen temperature, and the single mode spectrum is temperature tunable over 1.8 cm −1.
Abstract: Continuous wave operation of a quantum cascade laser at λ=4.6 μm is reported above liquid nitrogen temperature. Optical powers of 15 mW at 50 K and 2 mW at 85 K are reported. The single mode spectrum is temperature tunable over 1.8 cm −1. These devices also operated in pulse mode with 20 mW peak power at 200 K. Gain measurements show evidence for ultralow linewidth enhancement factor α<0.1.
170 citations
TL;DR: MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication to achieve a good spectral matching between the emission wavelength and the detection range.
Abstract: We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal–organic vapor-phase epitaxy) InGaN/GaN p–n junction core–shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 μm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.
170 citations
TL;DR: In this article, a detailed carrier dynamics model for quantum well lasers is presented, which describes the transport of carriers using full continuity equations and the gain by rate equations for each well separately, and also takes into account electron-hole interactions which modify the energy band structure.
Abstract: A detailed carrier dynamics model for quantum well lasers is presented. The model describes the transport of carriers using full continuity equations and the gain by rate equations for each well separately, and it also takes into account electron-hole interactions which modify the energy band structure. To this end, the model includes Poisson and Schrodinger equations. The model is solved in steady state where it yields nonuniform carrier distributions along the crystal growth axis. Dynamically, the model is solved in the time domain, yielding the evolution of carriers in time and space and highlighting a new effect, photon-assisted carrier transport. The model is also solved in the small-signal regime where the phase lag in gain between wells is determined. >
170 citations