Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, the quantum-confined Stark effect on the photoluminescence of the lowest free exciton for electric fields perpendicular to the quantum well layers is investigated.
Abstract: We report on picosecond luminescence studies of GaAs/AlGaAs quantum wells in the regime of the quantum-confined Stark effect. A drastic increase of the recombination lifetime is accompanied by a Stark shift of the photoluminescence of the lowest free exciton for electric fields perpendicular to the quantum-well layers. A consistent picture of the quantum-confined Stark effect is presented.
170 citations
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21 Jul 1999
TL;DR: Free-Carrier Theory, Coulomb effects, Correlation effects, Bulk Band Structures, Quantum Wells, and Quantum Wells have been studied in the literature as mentioned in this paper for a wide range of applications.
Abstract: 1 Basic Concepts- 2 Free-Carrier Theory- 3 Coulomb Effects- 4 Correlation Effects- 5 Bulk Band Structures- 6 Quantum Wells- 7 Applications- References
170 citations
TL;DR: In this paper, an InxGa1−xN∕GaN multiple quantum well (MQW) structure that exhibited bright photoluminescence was examined with the three-dimensional atom probe.
Abstract: An InxGa1−xN∕GaN multiple quantum well (MQW) structure that exhibited bright photoluminescence was examined with the three-dimensional atom probe. The quantum wells were clearly imaged and the indium fraction x measured to be 0.19±0.01, in good agreement with x-ray diffraction measurements. The distribution of indium in the MQWs was analyzed: no evidence for either high indium concentration regions or indium clustering was found, in contrast with many of the transmission electron microscopy studies in the literature. The authors conclude that indium clustering is not necessary for bright luminescence in InGaN.
170 citations
TL;DR: In this paper, the authors studied the low-intensity light pulse propagation through an asymmetric double quantum well via Fano-type interference based on intersubband transitions and showed the generation of ultraslow bright and dark optical solitons in this system.
Abstract: We study the low-intensity light pulse propagation through an asymmetric double quantum well via Fano-type interference based on intersubband transitions. The propagation of the pulse across the quantum well is studied analytically and numerically with the coupled Maxwell-Schr\"odinger equations. We show the generation of ultraslow bright and dark optical solitons in this system. Whether the solitons are dark and bright can be controlled by the ratio of dipole moments of the intersubband transitions. Such investigation of ultraslow optical solitons in the present work may lead to important applications such as high-fidelity optical delay lines and optical buffers in semiconductor quantum wells structure.
169 citations
TL;DR: In this article, an InGaN∕GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaNs quantum well thicknesses are fabricated and characterized.
Abstract: InGaN∕GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, relative internal quantum efficiency (IQE) measurements indicate that a thinner well results to higher IQEs owing to the greater spatial overlap of electron and hole distribution functions.
169 citations