Raman spectroscopy

About: Raman spectroscopy is a research topic. Over the lifetime, 122605 publications have been published within this topic receiving 2891083 citations. The topic is also known as: Raman Spectrum Analysis & spectrum Analysis, Raman.

Doping single-layer graphene with aromatic molecules.

Abstract: Recently discovered single-layer graphene (SLG) has attracted great attention not only because this perfect 2-dimensional carbon crystalline structure enables unprecedented explorations of fundamental physics but also because of its exciting potentials in the post-silicon nanoeletronics 1-6 . As the electrical properties of SLG films are very sensitive to the local perturbations such as from surface charges 7-9 and adsorbed gas molecules 6 , it is plausible that the electronic structures, hence the performance, of SLG may be tailored by molecular doping on its surface. Herein, we demonstrated that the electronic structures of SLG can be differentially modulated by doping from various aromatic molecules. We also show that a simple spectroscopic method based on the Raman 2D and G band frequency sampling can be used to distinguish the n- and p-doped SLG. Raman spectroscopy is a powerful tool to rapidly and nondestructively examine intrinsic physical properties of various carbon nanostructures, including flat and one-atom thick carbon crystalline layer (graphene monolayer), stacked graphenes (graphite), and roll-up graphene monolayer (single-walled carbon nanotube–SWNT). The characteristic G (~1580-1590 cm -1 ) and 2D (~2690-2710 cm -1 ) Raman bands are able to reveal the number of stacked graphene layer 10-12 and the changes in charge carrier concentration (or Fermi energy shift) induced by static electrical field 13-14 .

Detection and identification of a single DNA base molecule using surface-enhanced Raman scattering (SERS)

Abstract: Nonresonant Raman cross sections of $\ensuremath{\sim}{10}^{\ensuremath{-}16} {\mathrm{cm}}^{2}$ per molecule are shown to be related to surface-enhanced Raman scattering (SERS) on colloidal silver clusters at near-infrared (NIR) excitation. The enhancement is found to be independent of cluster sizes between 100 nm and 20 \ensuremath{\mu}m. These experimental findings demonstrate that NIR SERS on colloidal silver clusters is an excellent technique for single molecule detection that is applicable for a broad range of molecules including ``colorless'' biomolecules, for example nucleotides in DNA sequencing. As an example, we present the detection of a single adenine molecule without any labeling based on its intrinsic surface-enhanced Raman scattering.

Raman characterization of defects and dopants in graphene

Abstract: In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.

Photosensor Device Based on Few-Layered WS2 Films

Abstract: Few-layered films of WS2, synthesized by chemical vapor deposition on quartz, are successfully used as light sensors. The film samples are structurally characterized by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. The produced samples consist of few layered sheets possessing up to 10 layers. UV–visible absorbance spectra reveals absorption peaks at energies of 1.95 and 2.33 eV, consistent with the A and B excitons characteristic of WS2. Current–voltage (I–V) and photoresponse measurements carried out at room temperature are performed by connecting the WS2 layered material with Au/Ti contacts. The photocurrent measurements are carried out using five different laser lines ranging between 457 and 647 nm. The results indicate that the electrical response strongly depends on the photon energy from the excitation lasers. In addition, it is found that the photocurrent varies non-linearly with the incident power, and the generated photocurrent in the WS2 samples varies as a squared root of the incident power. The excellent response of few-layered WS2 to detect different photon wavelengths, over a wide range of intensities, makes it a strong candidate for constructing novel optoelectronic devices.

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Abstract: There have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.