Relative permittivity

About: Relative permittivity is a research topic. Over the lifetime, 9426 publications have been published within this topic receiving 139883 citations. The topic is also known as: dielectric constant.

High dielectric constant microwave probes for sensing soil moisture

Abstract: Implantable soil moisture sensors suitable for long-term monitoring of moisture in highway subgrades and for similar applications are needed. Two candidate designs of microwave sensors (operating range 4 to 6 GHz) have been investigated for such applications. One design uses the fringing field of a low-loss dielectric slab waveguide (relative dielectric constant of 25) to obtain good resolution for finely divided soil such as bentonite clay with moisture ranging from 10 to 50 percent by dry weight for effective sample volumes of 20 to 40 cm2. The response of the dielectric waveguide sensor has been calculated in terms of the effective dielectric constant of the soil-water mixture. A model based on index of refraction yields an effective dielectric constant in reasonable agreement with experiment when effects of ionic conduction are accounted for. Another sensor design, better adapted for coarse materials, such as crushed limestone aggregate, uses waves launched from a tapered dielectric slab. By using either frequency or spatial averaging methods, the launched wave sensor accommodated aggregate particles passed by a 0.63-cm mesh sieve, and was found to have satisfactory resolution for the range of 0- to 10-percent moisture by dry weight.

RFID Tag and RF Structures on a Paper Substrate Using Inkjet-Printing Technology

Abstract: In this paper, inkjet-printed UHF and microwave circuits fabricated on paper substrates are investigated for the first time as an approach that aims for a system-level solution for fast and ultra-low-cost mass production. First, the RF characteristics of the paper substrate are studied by using the microstrip ring resonator in order to characterize the relative permittivity (epsivr) and loss tangent (tan delta) of the substrate at the UHF band for the first time reported. A UHF RFID tag module is then developed with the inkjet-printing technology, proving this approach could function as an enabling technology for much simpler and faster fabrication on/in paper. Simulation and well-agreed measurement results, which show very good agreement, verify a good performance of the tag module. In addition, the possibility of multilayer RF structures on a paper substrate is explored, and a multilayer patch resonator bandpass filter demonstrates the feasibility of ultra-low-cost 3-D paper-on-paper RF/wireless structures.

Near-zero refractive index photonics

Abstract: The underlying principles and unique optical applications of structures exhibiting near-zero dielectric permittivity and/or magnetic permeability are reviewed. The timely relevance to nonlinear, non-reciprocal and non-local effects is highlighted. Structures with near-zero parameters (for example, media with near-zero relative permittivity and/or relative permeability, and thus a near-zero refractive index) exhibit a number of unique features, such as the decoupling of spatial and temporal field variations, which enable the exploration of qualitatively different wave dynamics. This Review summarizes the underlying principles and salient features, physical realizations and technological potential of these structures. In doing so, we revisit their distinctive impact on multiple optical processes, including scattering, guiding, trapping and emission of light. Their role in emphasizing secondary responses of matter such as nonlinear, non-reciprocal and non-local effects is also discussed.

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Abstract: Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in devices, we calculate the out-of-plane and in-plane dielectric constant from first principles for TMDs in trigonal prismatic and octahedral coordination, as well as for h-BN, with a thickness ranging from monolayer and bilayer to bulk. Both the ionic and electronic contribution to the dielectric response are computed. Our calculations show that the out-of-plane dielectric response for the transition-metal dichalcogenides is dominated by its electronic component and that the dielectric constant increases with increasing chalcogen atomic number. Overall, the out-of-plane dielectric constant of the TMDs and h-BN increases by less than 15% as the number of layers is increased from monolayer to bulk, while the in-plane component remains unchanged. Our computations also reveal that for octahedrally coordinated TMDs the ionic (static) contribution to the dielectric response is very high (4.5 times the electronic contribution) in the in-plane direction. This indicates that semiconducting TMDs in the tetragonal phase will suffer from excessive polar-optical scattering thereby deteriorating their electronic transport properties. The out-of-plane dielectric constant of transition metal dichalcogenides and h-BN is thickness-dependent, unlike their in-plane counterpart. A team led by William Vandenberghe at the University of Texas at Dallas performed calculations of the optical and static relative permittivity of free-standing monolayer, bilayer, and bulk transition metal dichalcogenides, in the in-plane and out-of-plane directions. In h-BN, the in-plane contribution was found to be larger than its out-of-plane counterpart, and independent on the number of h-BN layers. Conversely, the out-of-plane h-BN dielectric constant showed an increase when going from monolayer to bulk. In transition metal dichalcogenides, the dielectric constant components displayed similar trends to those observed in h-BN with regards to their thickness evolution. The calculations also indicated that the electronic component dominates the overall dielectric response for most of the analyzed 2D materials.

Permittivity of pure water, at standard atmospheric pressure, over the frequency range 0-25 THz and the temperature range 0-100 °C

Abstract: All the currently available experimental permittivity data for pure water are used to derive an interpolation function that precisely represents e(ν,t,) at standard atmospheric pressure, for frequencies and temperatures in the ranges 0⩽ν⩽25THz and 0⩽t⩽100°C. The permittivity data is represented in terms of relaxations and resonances processes. There are three relaxations in the microwave region and two resonances in the far infrared. The temperature dependence of the relaxation and resonance parameters are determined. For example, at 25°C the three relaxation frequencies are 18.56GHz, 167.83GHz, 1.944THz and the two resonance frequencies are 4.03 and 14.48THz.