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Relaxation oscillator

About: Relaxation oscillator is a research topic. Over the lifetime, 1952 publications have been published within this topic receiving 22326 citations.


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Patent
06 Aug 1968
TL;DR: In this article, the square wave output of a clocked flip-flop is amplified and used to operate a switching transistor which controls the power to the load, which can provide medium voltage, high current switching into a load with nonlinear characteristics.
Abstract: A device providing medium voltage, high current switching into a load with nonlinear characteristics. The square wave output of a clocked flip-flop is amplified and used to operate a switching transistor which controls the power to the load.

3 citations

Journal ArticleDOI
TL;DR: In this article, an on-chip ac power source, which is composed of a Josephson relaxation oscillator and a superconducting LC resonator, was proposed to drive AQFP circuits at 5 GHz or higher frequencies.
Abstract: Adiabatic quantum-flux-parametron (AQFP) logic devices can operate under extremely low bit energy approaching the thermal limit by varying their potential energy adiabatically using ac bias currents. We have proposed an on-chip ac power source, which is composed of a Josephson relaxation oscillator and a superconducting LC resonator in order to drive AQFP circuits at 5 GHz or higher frequencies. We herein experimentally confirmed the correct switching operation of an AQFP gate at 4.94 GHz using the proposed on-chip ac power source. Furthermore, we confirmed that the ac power source can drive approximately 800 AQFP gates.

3 citations

Proceedings ArticleDOI
01 May 2016
TL;DR: The circuit modification which resolves the effects of the comparator delay in the trimming procedure is proposed, and the simulations in ams 0.18μ CMOS technology exhibit more than 5x the improvement in the precision compared to the conventional topology.
Abstract: This paper presents an improved technique for the calibration of the relaxation oscillators with respect to the delay of the comparators. The drawbacks of the conventional topology for the relaxation oscillators are analyzed. Based on the analysis, the circuit modification which resolves the effects of the comparator delay in the trimming procedure is proposed. The simulations in ams 0.18μ CMOS technology exhibit more than 5x the improvement in the precision compared to the conventional topology, evaluated in the temperature range from −40 to 125 °C.

3 citations

Patent
30 Jul 1998
TL;DR: In this paper, a method of calibration of a voltage controlled oscillator (VCO) is described, in which the VCO provides an output signal which is used to drive a dividing oscillator such as a relaxation oscillator.
Abstract: In a method of calibration of a voltage controlled oscillator (VCO), the VCO (100) provides an output signal which is used to drive a dividing oscillator (10) such as a relaxation oscillator (RO). The RO has at least two states, one in which the RO provides an output signal which has a first frequency that is related to the VCO output signal by a first ratio (e.g. 1/N) and one in which the relaxation oscillator provides a RO output signal which has a second frequency that is related to the VCO output signal by a second ratio (e.g. 1/(N+1)). By measuring the first and second frequencies (and knowing the relationship between the first and second ratios), the VCO frequency is calculated and stored (110). Several VCO frequencies can be calculated and stored for several applied voltages. As a result the VCO can be driven to any selected frequency in the calibrated range and can be used to provide an injection frequency for a radio.

3 citations

Journal ArticleDOI
Jr. W.O. Camp1
01 Aug 1971
TL;DR: In this article, it was shown that almost all microwave oscillations seen in GaAs, at all frequencies, can be completely accounted for by accumulation layer mode (LSA) operation of the device and therefore only dependent on the current peak-to-valley ratio and the circuit characteristics.
Abstract: The purpose of this letter is to show that almost all microwave oscillations seen in GaAs, at all frequencies, can be completely accounted for by accumulation layer mode (LSA) operation of the device and therefore only dependent on the current peak-to-valley ratio and the circuit characteristics. The electric field and space charge configurations inside the device must be considered only when they may result in avalanche breakdown. This is true for oscillations even at or below the "transit" frequency.

3 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202242
202128
202044
201962
201855