Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Vapor-phase self-assembled monolayer for improved mold release in nanoimprint lithography

Abstract: Resist adhesion to the mold is one of the challenges for nanoimprint lithography. The main approach to overcoming it is to apply a self-assembled monolayer of an organosilane release agent to the mold surface, either in the solution phase or vapor phase. We compared the atomic force microscopy, ellipsometry, reflection−absorption infrared spectroscopy, and contact angle results collected from substrates treated by two different application processes and found that the vapor-phase process was superior. The vapor-treated substrates had fewer aggregates of the silane molecules on the surface, because the lower density of the agent in the vapor phase was not conducive to aggregation formation, and received a superior coating of the releasing agent, because the vapor was more effective than the solution in penetrating into the nanoscale gaps of the mold. A pattern transfer of 20 parallel nanowires with a line width of 40 nm at 100 nm pitch-size was performed faithfully with the vapor-treated mold without any r...

Printing Process Suitable for Reel‐to‐Reel Production of High‐Performance Organic Transistors and Circuits

Abstract: cause appropriate compounds now exist for many types of devices, research has expanded to include patterning methods that can take advantage of the easy processability of these materials. Although a recently described photolithographic process produced impressive results, [7] there may be advantages (cost, flexibility in materials that can be patterned, etc.) in using less conventional, non-photolithographic methods. Several such techniques (e.g. ink-jet printing [8‐10] or screen printing [11‐13] ) now appear to be suitable for a range of fabrication tasks at scales larger than ^35‐ 100 mm. While there is speculation that the resolution of some of these methods can be improved to ^10 mm, there is no experimental evidence that any of them work reliably at scales of even ^20 mm, a factor of two larger than the critical dimensions (typically transistor channel lengths) needed for realistic applications of known materials. To address this problem, we recently demonstrated a fabrication strategy that combined an emerging high resolution technique (micromolding in capillaries [14] ) for defining critical features and an established low resolution method (screen printing) for patterning other elements of the devices. [15] We used this approach to produce organic transistors with channel lengths (^2 mm) comfortably smaller than those required for most important applications. We are currently working to improve the speed and flexibility of this technique, and to explore other methods that combine and match new specialized techniques with existing ones to yield a system that can pattern, in a rapid, low cost fashion, conducting elements with a resolution of at least 5‐10 mm, and dielectrics, semiconductors, conductors, and electroluminescent materials on scales of 30‐100 mm. Here we describe microcontact printing [16] and an upside-down fabrication sequence as components of a potentially useful route for manufacturing organic electronic devices. In this approach, microcontact printing first patterns source and drain electrodes and the appropriate interconnections at a resolution of ^1 mm; the remaining components of the device (i.e. semiconductor, interlayer dielectric, and gate electrodes) are then patterned on top of these electrodes using low resolution techniques. (In the more typical rightside-up sequence, formation of source/drain electrodes occurs on top of the dielectric and gate layers.) We believe that this new strategy has many characteristics necessary for the type of rapid, large volume reel-to-reel processing that is considered important for cost effectively exploiting organics in microelectronics. The fabrication begins with microcontact printing, a technique that uses elastomeric stamps and inks to print patterns of self-assembled monolayers (SAMs) that can then be used as resists to prevent removal of material or as initiators to guide material deposition. [17,18] This technique

Pattern formation method

Abstract: After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

The use of atomic layer deposition in advanced nanopatterning

Abstract: Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with atomic level control of the thickness and an excellent conformality on 3-dimensional surfaces. In recent years, ALD has been implemented in many applications in microelectronics, for which often a patterned film instead of full area coverage is required. This article reviews several approaches for the patterning of ALD-grown films. In addition to conventional methods relying on etching, there has been much interest in nanopatterning by area-selective ALD. Area-selective approaches can eliminate compatibility issues associated with the use of etchants, lift-off chemicals, or resist films. Moreover, the use of ALD as an enabling technology in advanced nanopatterning methods such as spacer defined double patterning or block copolymer lithography is discussed, as well as the application of selective ALD in self-aligned fabrication schemes.

Immersion lithography at 157 nm

Abstract: We present a preliminary study on the feasibility of immersion lithography at 157 nm for patterning below 70 nm. This technology can enable an enhancement in resolution of ∼40% without radical changes in lasers, optics, or resist technology. We have identified a class of commercially available liquids, perfluoropolyethers, which are good candidates for use as immersion liquids. They are transparent (α≈10−3 μm−1 base 10), optically clean, chemically inert, and compatible with at least some current resist materials and with the semiconductor manufacturing environment. We have also constructed a high-resolution lensless interference immersion lithography system, preserving much of the design of a previous nonimmersion interference system. With this immersion interference tool, we have patterned resist with 30 nm dense features.