Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature

Abstract: Integration of new low-κ interlayer dielectrics (ILD) with current damascene schemes is a continuing issue in the microelectronics industry. During integration of the ILD, processing steps such as plasma etching, resist strip, and chemical-mechanical planarization are known to chemically alter a layer of the dielectric. Here, porous organosilicate glass (OSG) ILD films, which—according to the 2004 edition of the International Technology Roadmap for Semiconductors—are projected for use in the 65 and 45 nm nodes, are investigated. spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are used to characterize the modified layer of the ILD after exposure to O2 or H2 resist strip plasmas. The effects of the two types of plasma etch chemistries on the formation of the modified layer were found to differ significantly. These effects include both the degree of modification (i.e., chemical composition) and depth of the modified layer. A key difference between the...

Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS

Abstract: The interconnects in a semiconductor device contacting metal lines comprise a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof. A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist comprises a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.

Process for dry lithographic etching

Abstract: Patterning of a layer of material that can be etched with gaseous mixture of oxygen, chlorine, and nitrogen as etchant species, such as a chromium or a chromium-containing compound layer, is accomplished by using a patterned organometallic resist, such as a polymer which contains silicon or germanium. Although gaseous mixtures of chlorine and oxygen etch chromium anisotropically. Some undercut of the chromium is still observed. This undercut is controlled or eliminated by adding nitrogen to the gas mixture. Layers of material that have been patterned in this way can then be used for photolithographic masks or reticles, for X-ray masks, for e-beam masks. or for direct patterning of other, underlying layers in semiconductor integrated circuits or other devices.

Display device and manufacturing method thereof

Abstract: In a semi-transmission liquid crystal display device, two resist masks are required to form a reflective electrode and a transparent electrode; therefore, cost is high. A transparent electrode and a reflective electrode which function as a pixel electrode are stacked. A resist pattern which includes a region having a thick film thickness and a region having a thinner film thickness than the aforementioned region is formed over the reflective electrode by using a light exposure mask which includes a semi-transmission portion. The reflective electrode and the transparent electrode are formed by using the resist pattern. Therefore, the reflective electrode and the transparent electrode can be formed by using one resist mask.