Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist

Abstract: Magnetic information storage density has increased at the rate of 60% per year for the past seven years. There is wide agreement that continuation of this trend beyond the physical limits of the continuous thin-film media currently used will likely require a transition to discrete, lithographically defined magnetic pillars. Interference lithography (IL) appears to be the most cost-effective means of producing two-dimensional arrays of such pillars. IL can rapidly expose large areas with relatively simple equipment, without the need for a mask, and with fine control of the ratio of pillar diameter to period. We show that negative-tone imaging yields three times the contrast of positive-tone imaging for the generation of holes in photoresist, suitable for subsequent deposition or electroplating of magnetic material. We use a negative i-line, chemically-amplified resist (OHKA THMR-iN PS1) to form 200 nm period arrays of magnetic dots in Co and Ni. Such arrays, with a variety of well controlled diameters, are used to study the effect of particle size on magnetic behavior.

Optical wafer metrology sensors for process-robust CD and overlay control in semiconductor device manufacturing

Abstract: This paper presents three optical wafer metrology sensors that are used in lithography for robustly measuring the shape and position of wafers and device patterns on these wafers. The first two sensors are a level sensor and an alignment sensor that measure, respectively, a wafer height map and a wafer position before a new pattern is printed on the wafer. The third sensor is an optical scatterometer that measures critical dimension-variations and overlay after the resist has been exposed and developed. These sensors have different optical concepts but they share the same challenge that sub-nm precision is required at high throughput on a large variety of processed wafers and in the presence of unknown wafer processing variations. It is the purpose of this paper to explain these challenges in more detail and give an overview of the various solutions that have been introduced over the years to come to process-robust optical wafer metrology.

Patterned resist and process

Abstract: A patterned image including on a substrate, a patterned image of a first resist polymeric material and patterned image of a second and different resist material on the first resist polymeric material. The polymeric material contains reactive hydrogen functional groups and/or reactive hydrogen precursor groups. At least the surface layer of the delineated and uncovered first resist polymer material is reacted with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of the polymeric material.

Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window

Abstract: A fabrication method for a semiconductor integrated circuits which permits the self-aligned formation of contact windows without causing shorts or breaks in the interconnecting lines in the device is provided. After forming gate electrodes and source/drain regions of transistors on a semiconductor substrate, an etch-stop layer and a BPSG film are successively deposited over the gate electrodes and the source/drain regions. After a resist having a contact window pattern is formed on the BPSG film, an isotropic dry etching using a microwave plasma is performed to etch the BPSG film. According to the isotropic dry etching, the laterally etching rate in the BPSG film can be controlled by adjusting the RF power, and a silicon dioxide film can be used as the etch stop layer. After the BPSG flow process, the etch stop layer on the contact region is etched away to form contact windows.

Material for forming photoresist lower layer film and method for forming pattern

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a lower layer film, in particular a lower layer film for a two- or three-layer resist process, the material comprising a novolac resin having a fluorene or tetrahydrospiro biindene structure as a base and having higher etching durability than polyhydroxystyrene or cresol novolac resin, and also to provide a method for forming a pattern by using the material. SOLUTION: The material for forming a lower layer film is prepared by adding a novolac resin having a fluorene or tetrahydrospiro biindene structure. The material for forming a lower layer film has sufficient absorbance to develop a sufficient antireflection effect in ≥200 nm film thickness by combining with an intermediate layer having an antireflection effect if necessary. The etching rate of the material by CF 4 /CHF 3 gas and Cl 2 /BCl 3 gas used for processing a substrate is lower than in a normal m-cresol novolac resin, which means high etching durability. A favorable resist figure after patterning is obtained. COPYRIGHT: (C)2005,JPO&NCIPI