Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Enhanced polymeric lithography resists via sequential infiltration synthesis

Abstract: Etch resistance of two commonly used lithography resists is increased significantly by sequential infiltration synthesis (SIS). Exposing films to trimethyl-aluminum and water with long dosage times infiltrates the bulk of the film with alumina, which renders them dramatically more resistant to plasma etching with no degradation to the patterns. Enhanced etch resistance eliminates the need for an intermediate hard mask and the concomitant costs and pattern fidelity losses. Moreover, by allowing for thinner resist films, this approach can improve the final pattern resolution.

Nanoimprint Lithography on Silica Sol–Gels: A Simple Route to Sequential Patterning

Abstract: Since the pioneering work of S.Y. Chou et al.[1] Nano Imprint Lithography (NIL) has emerged as a promising technique for surface patterning, opening for numerous applications ranging from nanophotonics[2] to microfluidics[3]. NIL basically consists in the stamping of deformable surfaces or films. Preferred materials are thermoplastics[4] and UV curable resists[5]. So far, most papers report on single imprinting methods for which the same surface is imprinted only once. In the present paper, we report the imprinting of square silica structures from simple line gratings and demonstrate how the specific thermo-rheological behavior of ICSG resists can be harnessed to form complex structures by sequential imprinting at low pressures.

Positive-working resist composition

Abstract: The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

Method and apparatus for production and use of nanometer scale light beams

Abstract: An optical system for determining and reproducing spatial separation of features in the range of 80Å to 2500Å for optical microscopy and lithography using visible light, the system being independent of the wavelength of the incident light. An aperture mask is provided having at least one aperture of between about 80Å and 2500Å diameter. The mask may be used in optical microscopy to view objects with a high degree of resolution by placing the mask within the near field of light emanating from a sample to be viewed. The mask may also be used for high resolution optical lithography by placing a resist material within the near field of light passing through the mask.

Fabrication of large area nanostructured magnets by interferometric lithography

Abstract: Patterned arrays of magnetic elements may be useful as media for high density magnetic storage applications. Interferometric lithography has been used to fabricate arrays of cobalt and nickel pillars with periods of 200 nm over areas of 5 cm/spl times/5 cm using a UV laser. This provides an economical and rapid method for manufacturing particle arrays.