Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Isolation structure using liquid phase oxide deposition

Abstract: A shallow trench isolation structure is formed by a process having a reduced number of steps and thermal budget by filling trenches by liquid phase deposition of an insulating semiconductor oxide and heat treating the deposit to form a layer of high quality thermal oxide at an interface between the deposited oxide and the body of semiconductor material (e.g. substrate) into which the trench extends. This process yields an isolation structure with reduced stress and reduced tendency to develop charge leakage. The structure can be readily and easily planarized, particularly if a polish-stop layer is applied over the body of semiconductor material and voids and contamination of the deposited oxide are substantially eliminated by self-aligned deposition above the trench in the volume of apertures on a resist used to form the trench.

Method for forming pattern

Abstract: A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

Ultrathin extreme ultraviolet patterning stack using polymer brush as an adhesion promotion layer

Abstract: Initial readiness of extreme ultraviolet (EUV) patterning has been demonstrated at the 7-nm device node with the focus now shifting to driving the “effective” k1 factor and enabling the second generation of EUV patterning. In current EUV lithography, photoresist thicknesses <30 nm are required to meet resolution targets and mitigate pattern collapse. Etch budgets necessitate the reduction of underlayer thickness as well. Typical spin-on underlayers show high defectivity when reducing thickness to match thinner resist. Inorganic deposited underlayers are lower in defectivity and can potentially enable ultrathin EUV patterning stacks. However, poor resist-inorganic underlayer adhesion severely limits their use. Existing adhesion promotion techniques are found to be either ineffective or negatively affect the etch budget. Using a grafted polymer brush adhesion layer, we demonstrate an ultrathin EUV patterning stack comprised of inorganic underlayer, polymer brush, and resist. We show printing of sub-36-nm pitch features with a good lithography process window and low defectivity on various inorganic substrates, with significant improvement over existing adhesion promotion techniques. We systematically study the effect of brush composition, molecular weight, and deposition time/temperature to optimize grafting and adhesion. We also show process feasibility and extendibility through pattern transfer from the resist into typical back end stacks.

Chemical Imaging of Photoresists with Coherent Anti-Stokes Raman Scattering (CARS) Microscopy

Abstract: Coherent anti-Stokes Raman scattering (CARS) microscopy is demonstrated to be a powerful imaging technique with chemical specificity for studying chemically amplified polymer photoresists. Samples of poly(tert-butyloxycarbonyloxystyrene) (PTBOCST) resist imprinted by interferometric lithography with a pattern of lines/spaces of 400 nm/400 nm and 200 nm/200 nm were used to test CARS imaging capabilities. Chemical contrast in the image is obtained by probing the carbonyl stretching vibration of the tert-butoxyl carbonyl group of PTBOCST. The experimental images demonstrate high spatial resolution (≈270 nm) and strong signal, which allows short acquisition times. Advantages and limitations of CARS in comparison with other imaging techniques with chemical specificity, such as infrared near field scanning optical microscopy (IR NSOM), are discussed.