Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Limiting factors in sub- 10 nm scanning-electron-beam lithography

Abstract: Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications [F. S. Bates and G. H. Fredrickson, Annu. Rev. Phys. Chem. 41, 525 (1990); Black et al., IBM J. Res. Dev. 51, 605 (2007); Yang et al., J. Chem. Phys. 116, 5892 (2002)] have driven demand for feature sizes well into the sub-10nm domain, close to the resolution limit of the current generation of SEBL processes. In this work, the authors have used a combination of calculation, modeling, and experiment to investigate the relative effects of resist contrast, beam scattering, secondary electron generation, system spot size, and metrology limitations on SEBL process resolution. In the process of investigating all of these effects, they have also successfully yielded dense structures with a pitch of 12nm at voltages as low as 10keV.

Simultaneous and selective partitioning of via structures using plating resist

Abstract: Systems and methods for simultaneously partitioning a plurality of via structures into electrically isolated portions by using plating resist within a PCB stackup are disclosed. Such via structures are made by selectively depositing plating resist in one or more locations in a sub-composite structure. A plurality of sub-composite structures with plating resist deposited in varying locations are laminated to form a PCB stackup of a desired PCB design. Through-holes are drilled through the PCB stackup through conductive layers, dielelectric layers and through the plating resist. Thus, the PCB panel has multiple through-holes that can then be plated simultaneously by placing the PCB panel into a seed bath, followed by immersion in an electroless copper bath. Such partitioned vias increase wiring density and limit stub formation in via structures. Such partitioned vias allow a plurality of electrical signals to traverse each electrically isolated portion without interference from each other.

Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early

Abstract: IO N Lithography followed by plasma etching is the standard method for manufacturing microelectronics. Requirements on lateral resolution and vertical dimensions translate into signifi cant engineering challenges for the lithographic imaging layer (resist). The resist needs to have high resolution, little line-edge roughness, high resistance to plasma etching, and signifi cant mechanical stiffness to prevent pattern collapse during wet development. Presently, no resist material satisfi es all these requirements simultaneously. We show that many of the qualities of an ideal resist layer can be achieved by improving plasma etch resistance of poly(methyl methacrylate) (PMMA). PMMA treated with aluminum oxide sequential infi ltration synthesis (SIS) allows dense high-resolution (sub-20 nm) patterns to be defi ned and transferred deeply into silicon without an intermediate hard mask. The improved etch resistance of the SISPMMA also allows the aspect-ratio of the resist structures to be decreased below the limit of wet collapse, thereby meeting the requirements of the International Technology Roadmap for Semiconductors up to year 2022. Lithography and plasma etching form the cornerstones of nanoscale manufacturing. Initially developed for the microelectronics industry, these techniques are also essential to other technologies, such as micro-electro-mechanical and microfl uidic systems. Indeed, the physical realization of any system with nanoscale components requires a certain degree of topdown patterning. In lithography, an imaging layer (resist) sensitive to light or electrons is exposed to the image of a fi ne pattern and developed in wet chemicals. Plasma etching is then used to transfer the pattern in the imaging layer to a material of interest. These procedures are then repeated many times to complete a functional system. Central to the success of these top-down manufacturing methods is the ability of the imaging layer to capture fi ne features with high fi delity. In addition, the imaging layer needs to play the role of etch mask. It needs to be resistant to plasma etching to allow pattern transfer into the underlying material. The imaging layer, however, is usually carbon-based and has little resistance to plasma etching. This non-ideality is

Rapid turnaround scanning probe nanolithography.

Abstract: Scanning probe nanolithography (SPL) has demonstrated its potential in a variety of applications like 3D nanopatterning, 'direct development' lithography, dip-pen deposition or patterning of self-assembled monolayers. One of the main issues holding back SPL has been the limited throughput for patterning and imaging. Here we present a complete lithography and metrology system based on thermomechanical writing into organic resists. Metrology is carried out using a thermoelectric topography sensing method. More specifically, we demonstrate a system with a patterning pixel clock of 500 kHz, 20 mm s − 1 linear scan speed, a positioning accuracy of 10 nm, a read-back frequency bandwidth of 100 000 line-pairs s − 1 and a turnaround time from patterning to qualifying metrology of 1 min. Thus, we demonstrate a nanolithography system capable of implementing rapid turnaround.