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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, 100nm sized resist patterns were made on flexible polyethylene-terephthalate (PET) film using newly developed monomer based UV curing imprinting lithography.
Abstract: Since polymer is flexible, lightweight, reliable and transparent and its material properties can easily be modified, it is a suitable substrate material for organic electronic devices, biomedical devices, and especially for flexible displays. To build a nano-device on a polymer substrate, nano to microsized patterning must be done. However, conventional photolithography cannot be used to fabricate patterns on flexible polymer substrate, due to the focusing and substrate handling issue associated with flexibility of polymer substrate and potential interaction between polymer and developer or other organic solvents used in photolithography. Degradation of polymer substrate during resist baking process over 120°C can be another problem. In this study, 100nm sized resist patterns were made on flexible polyethylene-terephthalate (PET) film using newly developed monomer based UV curing imprinting lithography. Compared to conventional imprint lithography, UV curing imprint lithography uses monomer based liquid p...

71 citations

Journal ArticleDOI
TL;DR: In this paper, the exposure characteristics of six polymer resists to 1.5 MeV H+, He+, and O+ ions and 20 keV electrons were measured and a model was developed which accounts for the variation in terms of the energy distribution around the particle track in conjunction with whether the resist requires activation of a single site or two adjacent sites to produce exposure.
Abstract: The exposure characteristics of six polymer resists to 1.5 MeV H+, He+, and O+ ions and 20 keV electrons were measured. The deposited energy per unit volume required to expose a resist was found to vary by up to a factor of ten between electrons and O+ ions. A model was developed which accounts for the variation in terms of the energy distribution around the particle track in conjunction with whether the resist requires the activation of a single site or two adjacent sites to produce exposure.

71 citations

Proceedings ArticleDOI
14 May 2004
TL;DR: In this paper, a technique was developed to investigate the role of aerial image contrast and image-log-slope (ILS) on the resulting magnitude of line edge roughness (LER) in resist with the goal of determining if the minimization of LER in current state-of-the-art, chemically amplified resist materials was limited by the quality of the projected aerial image or the materials and processing of the resist.
Abstract: A technique was developed to investigate the role of aerial image contrast and image-log-slope (ILS) on the resulting magnitude of line edge roughness (LER) in resist with the goal of determining if the minimization of LER in current state-of-the-art, chemically amplified resist materials was limited by the quality of the projected aerial image or the materials and processing of the resist. The process of image fading was employed as the vehicle for controlled aerial image degradation. By reducing the quality of the aerial image through fading, the image contrast and ILS were decreased in a well-controlled and predictable manner, resulting in increased magnitude of LER. The link between experiment and simulation was made possible by the identification of the iso-fading condition, which in analogy to the iso-focal dose, results in a unique exposure dose for which the critical dimension (CD) of a resist feature does not change with increasing levels of fading. At the iso-fading condition, experimentally measured values for LER were analyzed as a function of the contrast and ILS of the aerial image used for patterning. It was determined that contrast was a poor predictor of the magnitude of LER though variations in feature type or illumination. The change in LER as a function of the ILS, however, produced a common basis for the comparison of LER through variations in line width, pitch, fading, increased background level of light, and illumination conditions. To include the effects of exposure dose on the resulting LER of resist features, the experimentally measured analog of the ILS, the resist edge-log-slope (RELS), was also used to produce a common curve for the evaluation of resist LER. Although overexposure can be used to further increase the ILS of the aerial image at the edge of the printed feature, the magnitude of 3σ LER in PAR735 resist appeared to be limited to a value of approximately 5.0nm in the limit of infinite RELS. This suggested that while the aerial image plays a strong role on determining the magnitude of LER during resist printing, there also exists a fundamental limitation to LER from the resist materials that cannot be improved by further increase in the quality of the aerial image.

71 citations

Patent
07 Jun 2002
TL;DR: In this paper, a negative resist structure is described, in which a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase.
Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

71 citations

Journal ArticleDOI
TL;DR: In this paper, a modified version of thermal nanoimprint lithography was used to fabricate a rewritable, nonvolatile, molecular memory device with a density of 6.4 Gbit/cm2.
Abstract: We have utilized a modified version of thermal nanoimprint lithography to fabricate a rewritable, nonvolatile, molecular memory device with a density of 6.4 Gbit/cm2. It has the advantages of a relatively low operating temperature of (∼70 °C) and pressure of (<500 psi or 4.5 MPa), both of which are critical to preserving the integrity of the molecular layer. The architecture of the circuit was based on an 8×8 crossbar structure, with an active molecular layer sandwiched between the top and bottom electrodes. A liftoff process was utilized to produce the top and bottom electrodes made of Pt/Ti bilayers. The active molecular layer was deposited by the Languir–Blodgett technique. We utilized a new class of nanoimprint resist formulated by dissolving a polymer in its monomer. The formulation we used, was poly(benzyl methacrylate), dissolved in benzyl methacrylate with t-butyl peroxy 2-ethylhexanoate added as a self-initiator (8:90:2 by weight). The new resist allowed us to achieve Pt/Ti lines of 40 nm in width and 130 nm in pitch.

71 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501