Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Method for fabricating touch sensor panels

Abstract: A method for fabricating a touch sensor panel is disclosed. The method includes providing a substrate for the touch sensor panel, depositing a conductive material layer on a top surface of the substrate, depositing a metal layer on top of the conductive material layer, affixing a resist to a first area of the metal layer, the resist also adapted to serve as a passivation layer during passivation, removing metal from the metal layer outside of the first area; and performing passivation on the substrate while leaving the affixed resist intact.

Single mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor device

Abstract: Described is a process used during the formation of a semiconductor device to produce a doped layer of polycrystalline silicon having a pair of conductivity types using a single mask step. In a first embodiment, a patterned nonoxidizing layer is formed over the layer of polycrystalline silicon thereby leaving protected and exposed poly. The exposed polycrystalline silicon is doped, then oxidized, with the protected poly being free of oxidation. The nonoxidizing layer is stripped, and a blanket implant is performed. The oxidation prevents the previously doped polycrystalline silicon from being counterdoped. The oxidation is then stripped and wafer processing continues. In a second embodiment, a layer of resist is formed over the polycrystalline silicon layer, and the exposed poly is heavily doped with a material having a first conductivity type. The resist is removed, and the surface is blanket doped with a material having a second conductivity type. The second conductivity type is chosen so as to have minimal counterdoping effect of the previously doped polycrystalline silicon. Wafer processing continues.

Method of manufacturing molds for molding optical glass elements and diffraction gratings

Abstract: A base material excellent in heat resistance and high-temperature strength is processed into a desired configuration. The processed base material is coated with a heat-resistant film having excellent strength at high temperatures and low reactivity with a glass material to be molded. A resist is applied on the heat resistant film and a desired pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. Or if a mold having deep unevenness of the pressing surface is required, the resist is applied after an intermediate layer which permits selective etching is formed on the heat resistant film, and the required pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. The intermediate layer is removed by wet etching or dry etching to emphasize unevenness of the mask. The resist film or the resist film and intermediate layer film are completely removed and a part of the heat-resistant film is removed to obtain a mold having the desired configuration of the molding surface.

Resist underlayer film material and pattern forming method using the same

Abstract: PROBLEM TO BE SOLVED: To provide a resist underlayer film forming material which is effective as an antireflection film material used in microfabrication in a production process of a semiconductor device or the like, and a resist pattern forming method using the same and suitable for immersion lithography with ArF excimer laser light (193 nm). SOLUTION: The resist underlayer film material of a multilayer resist film used in lithography is obtained by blending at least a high molecular compound represented by formula (1) and having a mass average molecular weight in a range of 1,000-100,000 and an extinction coefficient (an imaginary value of a refractive index; k value) at 193 nm wavelength in a range of 0.10-0.38, and one or more compounds selected form blended phenol low-nucleus bodies and phenol fullerenes and having an extinction coefficient (an imaginary value of a refractive index; k value) at 193 nm wavelength in a range of 0.4-1.1, wherein R 1 and R 5 are independently a hydrogen atom or a methyl group; R 2 and R 3 are a hydrogen atom, R 2 and R 3 may bond to each other to form a methylene group; R 4 and R 6 are independently a hydrogen atom, a glycidyl group or an acid-labile group; m and n are a positive number of 1-4; and a1, a2 and b are a positive number, provided that 0≤a1/(a1+a2+b)≤0.3, 0≤a2/(a1+a2+b)≤0.5, 0 COPYRIGHT: (C)2009,JPO&INPIT

Scanning systems for high resolution E-beam and X-ray lithography

Abstract: An electron-beam lithography apparatus and method, including an electron source with a mask or photocathode for generating a patterned electron beam; an electron-sensitive resist layer; a conductive plate with a slit, located between the electron source and the resist layer, with the patterned electron beam passing only through the slit; an electric field between the electron source and the conductive plate to accelerate electrons, with the conductive plate causing the electric field between the plate and the resist to be substantially zero; a magnetic field between the electron source and the resist, to focus electrons on the resist; and alignment device for synchronously scanning the mask or photocathode and the resist at the same velocity relative to the slit and to the electron source, and at zero velocity relative to each other, so that substantially all of the pattern of the patterned electron beam is imaged on the resist without substantial change in size.