Topic
Resist
About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.
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Patent•
23 Mar 2000TL;DR: In this article, a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition is presented, where corrosion of semiconductor materials, circuit-forming materials, insulating films, etc.
Abstract: An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.
70 citations
01 Jun 1992
TL;DR: In this article, a new chemical amplification resist for ArF and KrF excimer lithography was proposed, which comprises alicyclic copolymer of adamantylmethacrylate and tert-butylmithacrylated, with triphenylsulfonium hexafluoroantimonate as a photo acid generator.
Abstract: We designed a new chemical amplification resist for ArF and KrF excimer lithography. The resist comprises alicyclic the copolymer of adamantylmethacrylate and tert-butylmethacrylate, with triphenylsulfonium hexafluoroantimonate as a photo acid generator. This resist is highly transparent at KrF and ArF wavelengths because it has no aromatic and its dry etch resistance is comparable to that of a Novolac resist. The lithographic performance of this resist was evaluated using a KrF excimer laser stepper. A less than 0.5 micron line and space pattern profile was obtained with our resist.
70 citations
Patent•
04 Dec 1997TL;DR: In this paper, an organic bottom anti-reflective coating (12) isdeposited on an underlying film (11), a resist pattern is created on the organic bottom and a dry-etching is performed with respect to this resist pattern masked with the resist pattern.
Abstract: After an organic bottom anti-reflective coating (12) is
deposited on an underlying film (11), a resist pattern (15) is
formed on the organic bottom anti-reflective coating (12). Dry
etching is performed with respect to the organic bottom anti-reflective
coating (12) masked with the resist pattern (15) to
form an anti-reflective coating pattern. The dry-etching of the
organic bottom anti-reflective coating (12) is performed by using
etching gas containing gas having the S component such as
SO 2 /O 2 -based etching gas or COS/O 2 -based etching gas.
70 citations
TL;DR: In this paper, a process to transfer microscale patterns on a fully exposed (unpatterned) substrate is described, which uses electrochemical means and a specialised electrochemical reactor for pattern transfer.
70 citations
Patent•
07 Aug 2003TL;DR: In this paper, a resist resin having a specific bridged-bond-containing aliphatic ring and a resist composition comprising the same are provided, by using this resist composition, a resist pattern excellent in both transparency and dry-etching resistance can be formed by alkali development with high resolution.
Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
70 citations