scispace - formally typeset
Search or ask a question
Topic

Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, a nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process.
Abstract: A nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high‐resolution negative resist under an electron beam lithography process It showed under 10‐mm resolution with little side roughness and high durability to halide plasma etching A sub‐10‐nm Ge quantum wire was perfectly etched off without defects Such a performance is suitable for nanoscale device processes

227 citations

Patent
21 Feb 2001
TL;DR: In this paper, a pattern-forming method was proposed for PED-stabilizer-containing resist material having high sensitivity and high resolution, and sufficient PED stability, provided that the resist material contains at least one compound selected from thiol derivatives, disulfide derivatives and thiolsulfonate derivatives.
Abstract: Provided are a PED-stabilizer-containing resist material having high sensitivity and high resolution, and sufficient PED stability; and a pattern forming method using the resist material. More specifically, the resist material contains at least one compound selected from thiol derivatives, disulfide derivatives and thiolsulfonate derivatives. This resist material may further contain a dissolution inhibitor and/or surfactant. The pattern forming method comprises steps of applying the resist material to a substrate; after a heat treatment, exposing the substrate to a high energy beam or electron beam through a photomask; and after an optional heat treatment, developing the resist material with a developer.

227 citations

Patent
21 Dec 2007
TL;DR: In this paper, a pattern-forming method was proposed, in which a substrate is coated with a positive resist composition of which solubility increases and decreases upon irradiation with actinic rays or radiation, so as to form a resist film.
Abstract: A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

225 citations

Journal ArticleDOI
TL;DR: It appears that removal of solvent and low-molecular-weight resin from the ®AZ resist may be responsible for the observed differential development rates and the soak time and temperature behavior indicate a diffusion-type process.
Abstract: A process is described that allows the use of the lift-off metallization technique with ultraviolet exposure of a single layer of ®AZ-type photoresist. The process consists of soaking the resist layer for a predetermined time either in chlorobenzene or other aromatic solvents such as toluene and benzene before or after exposure. After development, resist profiles with overhangs suitable for lift-off metallization are obtained. It appears that removal of solvent and low-molecular-weight resin from the ®AZ resist may be responsible for the observed differential development rates. In addition, the soak time and temperature behavior indicate a diffusion-type process.

224 citations

Patent
18 Dec 2000
TL;DR: In this paper, a developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device.
Abstract: A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.

224 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
88% related
Thin film
275.5K papers, 4.5M citations
87% related
Carbon nanotube
109K papers, 3.6M citations
83% related
Amorphous solid
117K papers, 2.2M citations
83% related
Photoluminescence
83.4K papers, 1.8M citations
82% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501