Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Plasma polymerized methyl‐methacrylate as an electron‐beam resist

Abstract: Plasma polymerized methyl‐methacrylate thin film was formed on a glass substrate coated with chromium as a resist for electron‐beam lithography. The polymerizations were conducted at two discharge frequencies of 13.56 MHz and 5 KHz using a capacitively coupled discharge electrode system in a bell‐jar‐type reactor. Delineations were carried out using an electron beam whose diameter and acceleration voltage were 0.5 μm and 20 kV, respectively. As a test pattern, 25 pairs of parallel lines and spaces each having a 10‐μm width were delineated in a rectangular area of 0.5×0.5 mm2. Each line of 10‐μm width was depicted by sweeping over using the electron beam with 20 repetitions. The patterns were developed on the chromium by CCl4 plasma etching.

High resolution resists for next generation lithographies

Abstract: The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Method for forming semiconductor device isolating regions

Abstract: A method for forming semiconductor device isolation regions including steps of forming a first insulating film on a semiconductor substrate, removing the first insulating film in a portion to become a device isolation region with use of a resist pattern formed in a one-time lithography step as a mask so as to form an opening which reaches the semiconductor substrate, removing the resist pattern to deposit a second insulating film on the first insulating film and the inside of the opening and then etching the entire surface in order to make the second insulating film remain on only the periphery of the bottom of the opening and to expose the surface of the semiconductor substrate in a central portion of the bottom of the opening, forming an oxide film on the surface of the semiconductor substrate exposed in the central portion of the bottom of the opening with use of the first insulating film and the second insulating film on the periphery of the bottom of the opening as a mask by a selective oxidation method, removing the second insulating film on the periphery of the bottom of the opening and then etching the surface of the semiconductor substrate exposed on the periphery of the bottom of the opening with use of the oxide film formed in the central portion of the bottom of the opening by the selective oxidation method and the first insulating film which remains in portions other than the device isolation region as a mask so as to form a trench, and burying the trench with a third insulating film.