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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


Papers
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Journal ArticleDOI
Y. Okuyama1, T. Hashimoto1, T. Koguchi1
TL;DR: In this paper, the characteristics of heavily ion-implanted photoresist films were studied in relation to types of photoresists, ion species, accelerating energies, and dose levels.
Abstract: The characteristics of heavily ion‐implanted photoresist films were studied in relation to types of photoresist, ion species, accelerating energies, and dose levels. By high energy, high dose ion implantation it was observed that the optical transmission of the resist film was exceedingly decreased and the resist becomes more mechanically, thermally, and chemically resistant. Several experimental data indicated that these results are due to the change of photoresist to disordered graphite. As an application of this ion‐implanted resist, a new photomask fabrication process is developed.

67 citations

Patent
28 Oct 1998
TL;DR: A semiconductor device manufacturing method having a copper wiring, comprises the steps of forming a second insulating film for covering the wiring on the first one, and then forming an opening over the wiring by exposing and developing the resist, forming a hole or groove in the third one by etching the third ones via the opening, removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber, and simultaneously removing a part of the second one via the hole or hole to expose the wiring via the holes or groove, and forming a metal film in the hole
Abstract: A semiconductor device manufacturing method having a copper wiring, comprises the steps of forming a second insulating film for covering the wiring on a first insulating film, forming a third insulating film which is made of material different from the second insulating film on the second insulating film, coating a resist on the third insulating film and then forming an opening over the wiring by exposing and developing the resist, forming a hole or groove in the third insulating film by etching the third insulating film via the opening, removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove, and forming a metal film in the hole or groove

67 citations

Journal ArticleDOI
18 Jul 2005
TL;DR: Two digital printing methods for the fabrication of active matrix thin-film transistor (AM-TFT) backplanes for displays are described and the utility of digital lithographic processing was demonstrated by the fabricated of prototype reflective displays using electrophoretic media.
Abstract: Two digital printing methods for the fabrication of active matrix thin-film transistor (AM-TFT) backplanes for displays are described. A process using printed resists layers, referred to as digital lithography, was used to fabricate arrays of hydrogenated amorphous silicon TFTs. TFTs were also fabricated using a combination of digital lithography to pattern metals and inkjet printing to pattern and deposit a polymeric semiconducting layer. The relative performance of amorphous silicon and polymer TFTs were evaluated. The utility of digital lithographic processing was demonstrated by the fabrication of prototype reflective displays using electrophoretic media.

67 citations

Journal ArticleDOI
TL;DR: In this article, the diffusion of photogenerated acid in chemical amplification resist systems was studied and it was found that solvent traces in the film cause a very strong increase of the acid mobility.
Abstract: A new method was developed to study the diffusion of photogenerated acid in chemical amplification resist systems which allowed an estimation of the diffusion range by simple means. The acid mobility was investigated for two different resist systems under various process conditions. It was found that solvent traces in the film cause a very strong increase of the acid mobility. In order to control the diffusion range, the post‐exposure‐bake temperature must be below the glass transition temperature. For one resist system, the increase in resist sensitivity with increasing baking temperature was much smaller than the corresponding increase in diffusion range. The results corresponded well with those obtained by lithography with the same resist.

67 citations

Patent
05 Jan 2005
TL;DR: In this article, a method for forming a stamper used in the manufacture of CDs, DVDs, and other types of optical disks comprises forming a substrate by rolling, and a resist layer is formed on the layer of material and patterned.
Abstract: A method for forming a stamper used in the manufacture of CDs, DVDs, and other types of optical disks comprises forming a substrate by rolling. A layer of material is deposited (e.g. by plating) onto the substrate. Thereafter, a resist layer is formed on the layer of material and patterned. Because the substrate is formed by rolling, it is relatively inexpensive to form the substrate to a desired thickness. Because the layer of material is formed by deposition (e.g. plating), it is relatively inexpensive to ensure that the layer has a very smooth surface (i.e. without necessitating a great deal of polishing).

67 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501