Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

X-ray lithography system

Abstract: An x-ray lithography system is disclosed in which x-rays are generated by directing a high energy laser beam against a metal target to form an x-ray emitting plasma. The x-rays from the plasma are then directed through a mask towards a resist covered wafer to cause a patterned exposure on the wafer resist coating. The mask, the portion of the target which the laser beam strikes and the portion of the wafer to be exposed are all within an evacuated chamber. The laser, prior to entering the chamber, is split into two separate beams, each of which are focused and directed through a window in the side of the chamber towards the same spot on the target. Apparatus, including an air bearing, seal and positioner, is provided to move the target at periodic intervals. Similar apparatus is provided to move the wafer from exposure section to exposure section. The laser beam system includes a face pumped laser beam amplifier and unidirectional beam expanders to allow the maximum energy to be transferred to the laser beam by the amplifier. A series of two or more laser pulses are provided in order to maximize the energy obtained from the laser amplifier. A magnet and a membrane shield are also provided to prevent high energy particles and dust contaminants from the plasma from effecting the lithography process. A materials handling device is provided for moving wafers, targets and masks and an alignment system operating within the evacuated chamber, positions of the wafer with respect to the mask prior to the exposure thereof.

Atomic-Scale Templates Patterned by Ultrahigh Vacuum Scanning Tunneling Microscopy on Silicon

Abstract: The ultrahigh vacuum (UHV) scanning tunneling microscope (STM) enables patterning and characterization of the physical, chemical, and electronic properties of nanostructures on surfaces with atomic precision. On hydrogen-passivated Si(100) surfaces, selective nanopatterning with the STM probe allows the creation of atomic-scale templates of dangling bonds surrounded by a robust hydrogen resist. Feedback-controlled lithography, which can remove a single hydrogen atom from the Si(100):H surface, demonstrates high-resolution nanopatterning. The resulting patterns can be used as templates for a variety of materials to form hybrid silicon nanostructures while maintaining a pristine background resist. The versatility of this UHV-STM nanolithography approach has led to its use on a variety of other substrates, including alternative hydrogen-passivated semiconductor surfaces, molecular resists, and native oxide resists. This review discusses the mechanisms of STM-induced hydrogen desorption, the postpatterning de...

Stacked integrated chips and methods of fabrication thereof

Abstract: Structure and methods of forming stacked semiconductor chips are described. In one embodiment, a method of forming a semiconductor chip includes forming an opening for a through substrate via from a top surface of a first substrate. The sidewalls of the opening are lined with an insulating liner and the opened filled with a conductive fill material. The first substrate is etched from an opposite bottom surface to form a protrusion, the protrusion being covered with the insulating liner. A resist layer is deposited around the protrusion to expose a portion of the insulating liner. The exposed insulating liner is etched to form a sidewall spacer along the protrusion.

Manufacture of semiconductor device

Abstract: PROBLEM TO BE SOLVED: To realize a method of manufacturing a semiconductor device with a multilayer interconnection structure which is high in productivity and kept from corrosion and where Cu is used as an interlayer connection electrode or a wiring circuit if necessary. SOLUTION: In an interlayer connection method of an IC possessed of a multilayer interconnection structure, a first process where a first Al wiring circuit 2 is provided, a second process where an interlayer insulating film 3 is provided, then a through-hole is bored in the insulating film 3 to make the first Al wiring circuit 2 exposed, a third process where an Al sheet meal layer 5 is formed on all the surface of the interlayer insulating film 3, a fourth process wherein a predetermined region where an interlayer connection electrode 7 and a second wiring circuit 8 are to be provided is exposed at a prescribed position on the sheet metal layer 5, and the region other than the predetermined region is covered with resist, a fifth process where a plating Cu metal layer is provided through a Cu electroplating method, and then the resist layer is removed, and a sixth process where a part of the sheet metal layer 5 exposed at a cutoff part by removal of the resist is reemerged so as to electrically isolate the interlayer connection electrode 7 from the second wiring circuit 8 are provided.

Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function

Abstract: One challenge existing since the invention of electron-beam lithography (EBL) is understanding the exposure mechanisms that limit the resolution of EBL. To overcome this challenge, we need to understand the spatial distribution of energy density deposited in the resist, that is, the point-spread function (PSF). During EBL exposure, the processes of electron scattering, phonon, photon, plasmon, and electron emission in the resist are combined, which complicates the analysis of the EBL PSF. Here, we show the measurement of delocalized energy transfer in EBL exposure by using chromatic aberration-corrected energy-filtered transmission electron microscopy (EFTEM) at the sub-10 nm scale. We have defined the role of spot size, electron scattering, secondary electrons, and volume plasmons in the lithographic PSF by performing EFTEM, momentum-resolved electron energy loss spectroscopy (EELS), sub-10 nm EBL, and Monte Carlo simulations. We expect that these results will enable alternative ways to improve the resol...