Topic
Resist
About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.
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TL;DR: In this paper, the effects of developing conditions on the lithography properties of hydrogen silsesquioxane (HSQ) have been investigated, using the contrast curve as a characterisation tool.
64 citations
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TL;DR: In this paper, the deformation of elastomeric stamps used in soft nanolithography and the fidelity of replicas made using these stamps were investigated using high-aspect ratio nanostructures fabricated via two-photon laser-scanning lithography.
Abstract: Using high-aspect-ratio nanostructures fabricated via two-photon laser-scanning lithography, we examine the deformation of elastomeric stamps used in soft nanolithography and the fidelity of patterns and replicas made using these stamps. Two-photon laser-scanning lithography enables us to systematically regulate the aspect ratio and pattern density of the nanostructures by varying laser-scanning parameters such as the intensity of the laser beam, the scanning speed, the focal depth inside the resist, and the scanning-line spacing. Two commercially available stamp/mold materials with different moduli have been investigated. We find that the pattern-transfer fidelity is strongly affected by the pattern density. In addition, we demonstrate that true three-dimensional structures can be successfully replicated because of the flexible nature of elastomeric poly(dimethylsiloxane).
64 citations
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TL;DR: In this paper, a growth-site pattern for carbon nanotubes (CNTs) was fabricated on a nickel/silicon (Ni∕Si) substrate by a conventional lithography method using a photopatternable resist.
Abstract: The authors developed a growth method for carbon nanotubes (CNTs) by using a resist-assisted patterning process. The CNTs can be grown directly on the patterned catalyst surface without a diffusion barrier. The growth-site patterns were fabricated on a nickel/silicon (Ni∕Si) substrate by a conventional lithography method using a photopatternable resist. The growth mechanism of the CNTs without diffusion barrier was confirmed by Raman spectroscopy and transmission-electron microscope measurement. The carbon-network formation during forming the process is a key parameter for CNT growth. The technique will be applicable to a low-cost fabrication process of electron-emitter arrays.
64 citations
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TSMC1
TL;DR: In this paper, a method for lithography patterning is described, which includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL.
Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
64 citations
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12 Jan 1999TL;DR: In this paper, the inventive process for forming conductive vias between circuit elements formed on either side of a flexible substrate is disclosed, where the photoresist is exposed (patterned) and a plating operation is used to fill the vias with a conductive material.
Abstract: Processes for forming conductive vias between circuit elements formed on either side of a flexible substrate are disclosed. In one embodiment, the inventive process starts with a flexible film polyimide substrate on each side of which is arranged a layer of copper. Both of the copper surfaces are coated with photoresist. Blind vias are then drilled through the top copper layer and substrate using a laser. The photoresist is then exposed (patterned). A plating operation is used to fill the vias with a conductive material. The resist is then developed and the line and pad structures on the surface of the copper layer are plated. The photoresist is then stripped. In a variation of this embodiment, the photoresist is imaged prior to drilling of the vias using a laser. In an alternative embodiment of the inventive process, a through hole is drilled instead of a blind via. In either embodiment, there is no process step between the photo-exposure of the resist and the laser drilling which can impact the dimensions of the substrate.
63 citations