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Resist
About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.
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TL;DR: In this paper, a mask with protruded patterns is placed a distance above an initially flat polymer film cast on a substrate, and during a heating cycle that raises the temperature above the polymer's glass transition temperature and then cooled back to the room temperature, the polymer was attracted to the mask protrusions on their own, forming the mesas that have a lateral dimension identical to that of the mask and a relatively steep sidewall.
Abstract: We have discovered and developed a method that can directly pattern polymer microstructures of arbitrary shapes without using a resist, exposure, chemical development, and etching. A mask with protruded patterns is placed a distance above an initially flat polymer film cast on a substrate. During a heating cycle that raises the temperature above the polymer’s glass transition temperature and then cooled back to the room temperature, we found that the polymer was attracted to the mask protrusions on their own, forming the mesas that have a lateral dimension identical to that of the mask protrusions, a height equal to the distance between the mask and the substrate, and a relatively steep sidewall. The method, termed lithographically induced self-construction, is important to the fabrication of polymer electronic and optoelectronic devices.
215 citations
TL;DR: The properties of polymethyl methacrylate resist, a new electron resist developed at IBM Research, are compared in comparison to commercial photoresists under electron beam exposure as discussed by the authors.
Abstract: The properties of poly‐(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one‐ and half‐micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with . Also, a method for producing high‐resolution, defect‐free masks through methacrylate resist is presented.
215 citations
TL;DR: This study uses lithography based on scanning tunneling microscopy (STM) to demonstrate that disruption of SAMs on gold allowed the formation of etched features as small as 20 nm using a CN - /O 2 etch, implying that etching occurred where damage of a few molecules in the ordered SAM allowed passage of cyanide, whereas adjacent molecules inthe SAM remained unperturbed at this scale.
Abstract: We describe high-resolution lithography based on transfer of a pattern from an elastomeric stamp to a solid substrate by conformal contact : a nanoscale interaction between substrate and stamp on macroscopic scales that allows transport of material from stamp to substrate. The stamp is first formed by curing poly(dimethyl siloxane) (PDMS) on a master with the negative of the desired surface, resulting in an elastomeric solid with a pattern of reliefs, typically a few microns deep, on its surface. The stamp provides an ink that forms a self-assembled monolayer (SAM) on a solid surface by a covalent, chemical reaction. Because SAMs act as highly localized and efficient barriers to some wet etches, microcontact printing forms part of a convenient lithographic system not subject to diffraction or depth of focus limitations while still providing simultaneous transfer of patterned features. Our study helps to define the strengths and limitations of microcontact printing with SAMs, a process that is necessary to assess its worth to technology. We used lithography based on scanning tunneling microscopy (STM) to demonstrate that disruption of SAMs on gold allowed the formation of etched features as small as 20 nm using a CN - /O 2 etch. This result implied that etching occurred where damage of a few molecules in the ordered SAM allowed passage of cyanide, whereas adjacent molecules in the SAM remained unperturbed at this scale. Features as small as 30 nm 2 etched in gold over areas greater than 1 cm 2 resulted from microcontact printing with replicas of electron-beam-formed masters, with the transfer of these printed SAMs requiring only 1 s. STM studies of these transferred SAMs revealed an achievable order indistinguishable from that found for SAMs prepared from solution. Facile alignment of printing steps at submicron scales may result from new designs of stamps that exploit their limited deformability and lock-and-key-type approaches to mate stamp and substrate.
214 citations
IBM1
TL;DR: In this article, the historic development of electroplating through lithographic mask technology in IBM starting from the 1960 s to the present day, the influence this technology has had on electronics, and the influence it may have in the future on HI-MEMS.
214 citations
Patent•
IBM1
TL;DR: In this paper, a process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal: the first layer is an antireflective coating such as titanium nitride applied to the metal and the second layer is a barrier comprising silicon such as sputtered silicon or SiO₂.
Abstract: A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO₂. The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.
213 citations