Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Process for etching a semiconductor lead frame

Abstract: A method for producing a lead frame having outer leads and inner leads, for use in constructing a resin-sealed semiconductor package comprises etching processes for etching a blank. A first resist pattern having a first opening and a second resist pattern having second openings are formed on the first and the second major surfaces of a blank. The first and the second major surfaces of the blank are etched through the first and the second resist pattern by a first etching process using a first etchant to form a first recess corresponding to the first opening and second recesses corresponding to the second recesses in the first and the second major surfaces, respectively. The first recess is filled up with an etch-resistant layer. The second major surface is etched through the second resist pattern by a second etching process using a second etchant so that portions of the blank corresponding to the second openings of the second resist pattern are etched through to form the tips of the inner leads.

Method for three-dimensional control of solubility properties of resist layers

Abstract: An electron beam exposure method for controlling the solubility of resist layers used in a variety of lithography processes, to permit removal of the resist material from selected positions and depths in the resist. By controlling the energy of a uniform electron beam impinging on the resist, the method selects a resist depth for applying a dose of electrons, the effect of which is to change the solubility properties of the resist material at the selected positions and depths. Subsequent removal of unwanted portions of the resist produces desired resist wall slope and edge profiles in the developed patterns in photoresist. One embodiment of the invention uses the same basic method to produce three-dimensional structures in the resist material, including bridge-like structures in which lower layers are removed from beneath intact upper layers. In a variant of this embodiment, the same technique is used to form a three-dimensional mold in the resist material, and then three-dimensional structures of another material, such as metal are formed by filling the mold.

Method of manufacturing a semiconductor device

Abstract: PURPOSE: To provide a method for manufacturing a semiconductor device, without etching a silicon substrate when eliminating a mask layer, even if the ground of a film to be machined is a silicon substrate. CONSTITUTION: A WO3 film 13 is formed on a silicon oxide film 12 formed on a silicon substrate 11. Then, after an Al2O3 film 14 is deposited on the entire surface, and an organic antireflection film 15 is applied and fired successively, a resist pattern 16 with a prescribed pattern is formed (a). The organic antireflection film 15 is etched by RIE treatment, and the Al2O3 film 14 is etched by the RIE treatment (b). The WO3 film 13 is etched by the RIE treatment, and the upper surface of the silicon oxide film 12 is made to be exposed (c). The silicon oxide film 12 is etched by the RIE treatment, and the silicon substrate 11 is made to be exposed (d). By performing dipping into hot water at 60 deg.C , the WO3 film 13 is dissolved, and at the same time the Al2O3 film 14 is lifted off (e).

Nanometer‐scale resolution of calixarene negative resist in electron beam lithography

Abstract: New nonpolymer materials, calixarene derivatives were tested as high‐resolution negative resists for use in electron beam lithography. Arrays of 12‐nm‐diam dots with a 25 nm pitch were fabricated easily. The sensitivity of calixarene in terms of area dose ranged from 700 to 7000 μC/cm2, and the required dose for dot fabrication was about 105 electrons/dot. The standard area dose for calixarene is almost 20 times higher than that for polymethyl methacrylate (PMMA), but the electron spot dose for dot fabrication by calixarene is almost the same as that for PMMA and other highly sensitive resists such as SAL (chemically amplified negative resist for electron beam made by Shipley). The electron spot dose for such extremely small dots does not seem to depend on standard area dose, but any resist tends to require the same dose under exposure in a 50 keV electron beam writing system. We propose a qualitative exposure model that suggests a tradeoff of dose and dot size. The calixarene seems to be promising materi...

Method and material for forming a double exposure lithography pattern

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.