Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Nanoscale patterning of an organosilane monolayer on the basis of tip‐induced electrochemistry in atomic force microscopy

Abstract: An organosilane trimethylsilyl (TMS) monolayer prepared on silicon (Si) substrate by chemical vapor deposition was successfully applied as a self‐developing resist for atomic force microscope (AFM) lithography. The thickness of the monolayer was less than 1 nm. This resist was locally degraded due to electrochemical reactions induced in the junction between a conductive AFM probe and a Si–TMS sample. The generated pattern on the sample was then transferred to the Si substrate by chemical etching using the degraded region as an etching window. Degradation of the monolayer proceeded with both positive and negative sample biases. However, the absolute values of the voltage at which the probe‐scanned region began to show etching were +3.0 for Vs>0 and −5.0 V for Vs<0, in a 60% relative humidity air atmosphere. Faster patterning was achieved through increased current flow by applying a higher bias voltage. A 500 μm/s line drawing at Vs=+20.0 V with 2–3 nA was obtained. The number of injected electrons was esti...

Positive resist pattern formation through focused ion beam exposure and surface barrier silylation

Abstract: A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.

Use of interference lithography to pattern arrays of submicron resist structures for field emission flat panel displays

Abstract: We report on the fabrication of square arrays of submicron resist dots and holes using interference lithography—a relatively simple and inexpensive way of generating periodic structures over large areas. The arrays are formed by exposing a layer of resist to a two-beam interference pattern followed by a second exposure after rotating the sample by 90°. Arrays with periods of 0.67–3.2 μm were fabricated. The size of the structures is accurately controlled by varying the exposure dose. The exposure latitude for patterning arrays of dots is ±16% for a ±10% change in structure width when an optimum size-to-period ratio is chosen. Compared to dots, holes are patterned with a smaller process window. We show that arrays of dots with diameters as small as 0.20 μm, sidewall slopes of 88°, and aspect ratios as high as 3:1 can be produced. These structures are well suited for the production of field emission flat panel displays.

Reflection preventing film and process for forming resist pattern using the same.

Abstract: A reflection preventing film for forming a resist pattern and a process for forming the resist pattern using the film The film comprises a copolymer was copolymerized of monomers which comprise at least one unsaturated carboxylic acid monomer, at least one epoxy group-containing unsaturated monomer, and at least one cinnamoylphenyl group-containing unsaturated monomer The reflection preventing film exhibits a high halation preventing effect, involves no sublimation of radiation absorbing components contained therein, is free from occurrence of intermixing, possesses excellent heat resistance, exhibits a superb dry etching performance and storage stability, and produces resist patterns with excellent resolution and precision The resist pattern forming process comprises forming the reflection preventing film on a substrate, forming a resist coating film on said reflection preventing film, irradiating the resist film with a radiation, and developing the resist coating film

Photo mask and pattern forming method

Abstract: A resist pattern is formed with a phase-shifting mask 4 in which transparent regions through an opaque region are different 180° in phase from one another. In this case, when positive resist 1 is subjected to exposure, the widths of the opaque regions 5A and 5B of the mask 4 are changed according to a pattern adjacent thereto, so that a fine pattern having the same line width is formed with high accuracy.