Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Thermal conductivity measurements of thin-film resist

Abstract: In electron-beam and photolithography, local heating can change the resist sensitivity and lead to variations in significant critical dimension Existing models suffer from the lack of experimental data for the thermal properties of the polymer resist films We present the measurements of both out-of-plane and in-plane thermal conductivity of thin resist films following different exposure conditions An optical thermoreflectance technique was used to characterize out-of-plane thermal conductivity; the out-of-plane thermal conductivity of exposed SPR™-700 resist increases as a function of exposure dose We also designed and fabricated a free-standing micro-electrode structure for measuring the in-plane thermal conductivity and results for poly(methylmethacrylate) films were obtained, indicating that, unlike polyimide films, there is no appreciable anisotropic behavior

Manufacture of semiconductor device

Abstract: PURPOSE:To improve controllability of a low resistance material film, which is formed on heat resisting material films submicrons thick by forming the patterned heat resisting material films and the low resistance material film, which is formed thereon in a self-alignment mode. CONSTITUTION:On a semiconductor substrate 1, a gate pattern of a gate electrode 10 in a double-layered structure comprising heat resisting material films 3a and 3b having the different etching characteristics is formed. Then, a resist film 4 is applied on the entire surface. Thereafter, the resist film 4 is etched. Thus the top of the upper heat resisting material film 3a in the pattern of the gate electrode 10 is made to protrude. After the upper heat resisting material film 3a is removed, a low resistance material film is formed on the entire surface. The low resistance material film 5 is formed on the lower heat resisting material film 3b of the pattern of the gate electrode 10 in a self-alignment mode. Thus, the stable gate configuration can be secured with good controllability even for a submicron length. Stable, excellent high frequency characteristics can be obtained on a run-to-run basis.

Manufacture of semiconductor device

Abstract: PURPOSE:To simplify a complex process when an aperture for forming an emitter is drilled by a method wherein the selective etching properties of N-type and P-type polycrystalline silicon to reduce the number of masks. CONSTITUTION:After a resist pattern is left on an SiO2 layer 23, a laminated layer composed of an SiO2 layer 13, an Si3N4 layer 14, 1st polycrystalline silicon layer 15 and the SiO2 layer is patterned by RIE. After the SiO2 layer 23 is removed by an NH4F solution, 2nd polycrystalline silicon layer 16 is formed. Then, As, an N-type impurity, is diffused into the 2nd polycrystalline silicon layer 16 contacted with the 1st polycrystalline silicon layer 15 to convert a part of the 2nd polycrystalline silicon layer 16 into an N-type region 26. In this heat treatment process, boron which is added to the 2nd polycrystalline silicon layer 16 is diffused into silicon to form a diffused layer 18 for leading out the base electrode of a transistor. Then, after an SiO2 layer 33 is removed, the N-type region 26 in the 2nd polycrystalline silicon layer 16 and the 1st polycrystalline silicon layer 15 are dissolved and removed by KOH solution. Then an SiO2 layer 43 is formed on the 2nd polycrystalline silicon layer 16. The SiO2 layer 43 is formed so as to have a thickness of not less than 2000 Angstrom which is four times of the thickness of the SiO2 layer 13 in order to be sufficiently left when the SiO2 layer 13 on the region where an emitter region is to be formed is removed in a process afterwards.

Laser Interference Lithography

Abstract: In this chapter we explain how submicron gratings can be prepared by Laser Interference Lithography (LIL). In this maskless lithography technique, the standing wave pattern that exists at the intersection of two coherent laser beams is used to expose a photosensitive layer. We show how to build the basic setup, with special attention for the optical aspects. The pros and cons of different types of resist as well as the limitations and errors of the setup are discussed. The bottleneck in Laser Interference Lithography is the presence of internal reflection in the photo-resist layer. These reflections can be reduced by the use of antireflection coatings. However the thicknesses of these coatings depends on the angle of exposure and the material property or combination of materials in thin films. We show with some examples how to deal with this issue. Finally we show examples of more complex patterns that can be realized by multiple exposures.