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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


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Patent
21 Jun 2007
TL;DR: In this article, a method of manufacturing a semiconductor device with no polishing after resin coating required, capable of forming an effective electrode terminal at the lower part of the semiconductor element depending on cases, with a relatively simple manufacturing method is presented.
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with no polishing after resin coating required, capable of forming an effective electrode terminal at the lower part of a semiconductor element depending on cases, with a relatively simple manufacturing method SOLUTION: Front and rear side wiring patterns 26 and 27 are formed on both sides of a lead frame material 23, using first and second resist films 24 and 25, with anti-etching plating 20 and 21 applied on the exposed portions The second resist film 25 on the rear surface side is removed for half-etching, and a recess 29 that has been half-etched is injected with a resin 19 The front surface side of the lead frame material 23 is etched with the anti-etching plating 20 as a resist film, so that a lead frame base 12 is formed comprising joint terminals 14 and 14a and a lead 17 A semiconductor element 13 is mounted on the lead frame base 12, and the entire is resin-sealed after wire bonding COPYRIGHT: (C)2007,JPO&INPIT

61 citations

Journal ArticleDOI
TL;DR: In this paper, the same basic positive photoresist, a diazonaphtho- quinone-novo lac composite, will likely still be the resist of choice and will be the dominant technology well into the first half of the 1990s.
Abstract: Since the last review on resist materials for microlithography appeared in the Annual Review of Materials Science (Vol. 6, 1976) (1), astonishing progress has been made in microelectronics, especially in the technology of lithography used to generate high-resolution patterns. In 1976, the state­ of-the-art dynamic random access memory (DRAM) device was capable of storing 4000 bits of data and had minimum features of 5-6 flm. Photo­ lithography was utilized to pattern these devices using either contact print­ ing or, the then relatively new, one-to-one projection printing. Today, devices with one million bits of storage capacity are commercially available with minimum features of 1.0 flm (2). By 1976 standards, it is surprising that photolithography is still the technology used to fabricate micro­ electronic chips. Step-and-repeat 5 or 10 x reduction cameras and highly sophisticated I -toI projection printers are the dominant printing tech­ nologies. There is perhaps no better example than lithography to illustrate the uncertainty associated with predicting technological direction and change. In 1976, it was generally believed (though not by everyone) that photolithography would not be able to produce features smaller than about l.5 flm with high chip yields in a production environment. The current belief is that conventional photolithography will be able to print 0.6-0.8 flm features and will be the dominant technology well into the first half of the 1990s. The same basic positive photoresist, a diazonaphtho­ quinone-novo lac composite, will likely still be the resist of choice. The cost of introducing a new resist material and the cost associated with new hardware are strong driving forces pushing photolithography to its absolute, ultimate limits.

61 citations

Journal ArticleDOI
TL;DR: Lyding et al. as discussed by the authors demonstrated that a scanning tunneling microscope can be used to remove hydrogen (H) atoms from a silicon (100) 2 × 1 H-passivated surface through an electron stimulated desorption process.
Abstract: Lithographic precision is as or more important than resolution. For decades, the semiconductor industry has been able to work with ±5% precision. However, for other applications such as micronanoelectromechanical systems, optical elements, and biointerface applications, higher precision is desirable. Lyding et al. [Appl. Phys. Lett. 64, 11 (1999)] have demonstrated that a scanning tunneling microscope can be used to remove hydrogen (H) atoms from a silicon (100) 2 × 1 H-passivated surface through an electron stimulated desorption process. This can be considered e-beam lithography with a thin, self-developing resist. Patterned hydrogen layers do not make a robust etch mask, but the depassivated areas are highly reactive since they are unsatisfied covalent bonds and have been used for selective deposition of metals, oxides, semiconductors, and dopants. The depassivation lithography has shown the ability to remove single H atoms, suggesting the possibility of precise atomic patterning. This patterning proces...

61 citations

Patent
13 Sep 1999
TL;DR: In this article, an arrangement for optimizing a lithographic process forms a pattern on a silicon wafer using a photocluster cell system to simulate an actual processing condition for a semiconductor product.
Abstract: An arrangement for optimizing a lithographic process forms a pattern on a silicon wafer using a photocluster cell system to simulate an actual processing condition for a semiconductor product. The resist pattern is then inspected using a wafer inspection system. An in-line low voltage scanning electron microscope (SEM) system reviews and classifies defect types, enabling generation of an alternative processing specification. The alternative processing specification can then be tested by forming patterns on different wafers, and then performing split-series testing to analyze the patterns on the different wafers for comparison with the existing lithographic process and qualification for production.

60 citations

Patent
24 Dec 1997
TL;DR: In this article, a simulation method for simulating in a lithographic process is disclosed, and the method can expect a size of a resist pattern by obtaining a diffused aerial image model(DAIM) by determining a simplified model in a aerial image to represent a resist process without simulating full processes including a resist processes, and then applying the DAIM to a threshold model.
Abstract: A simulation method for simulating in a lithographic process is disclosed, and the method can expect a size of a resist pattern by obtaining a diffused aerial image model(DAIM) by determining a simplified model in a aerial image to represent a resist process without simulating full processes including a resist process, and then applying the DAIM to a threshold model.

60 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501