Topic
Resist
About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the changes in Raman spectra of graphene flakes after lithography processing are systematically investigated and it is found that substantial changes in the intensity of several Raman peaks are observed after the lithography processes involving electron-sensitive and photon-sensitive resists.
60 citations
TL;DR: Different DOE designs are presented for the sorting of optical vortices differing in either OAM content or beam size in the optical regime, with different steering geometries in far-field, appear promising for telecom applications both in free-space and in multi-core fibers propagation.
Abstract: During the last decade, the orbital angular momentum (OAM) of light has attracted growing interest as a new degree of freedom for signal channel multiplexing in order to increase the information transmission capacity in today’s optical networks. Here we present the design, fabrication and characterization of phase-only diffractive optical elements (DOE) performing mode-division (de)multiplexing (MDM) and spatial-division (de)multiplexing (SDM) at the same time. Samples have been fabricated with high-resolution electron-beam lithography patterning a polymethylmethacrylate (PMMA) resist layer spun over a glass substrate. Different DOE designs are presented for the sorting of optical vortices differing in either OAM content or beam size in the optical regime, with different steering geometries in far-field. These novel DOE designs appear promising for telecom applications both in free-space and in multi-core fibers propagation.
60 citations
Patent•
30 Apr 2001TL;DR: In this paper, the authors proposed a method of using silicon containing imaging layers to define sub-resolution gate structures, which can include depositing an anti-reflective coating over a layer of polysilicon, selectively etching the antireflective coatings to form a pattern, and removing portions of the poly-silicon layer using the pattern formed from the removed portions of anti reflective coating, which allows the use of trim etch techniques without a risk of resist erosion or aspect ratio pattern collapse.
Abstract: An exemplary method of using silicon containing imaging layers to define sub-resolution gate structures can include depositing an anti-reflective coating over a layer of polysilicon, depositing an imaging layer over the anti-reflective coating, selectively etching the anti-reflective coating to form a pattern, and removing portions of the polysilicon layer using the pattern formed from the removed portions of anti-reflective coating. Thus, the use of thin imaging layer, that has high etch selectivity to the organic underlayer, allows the use of trim etch techniques without a risk of resist erosion or aspect ratio pattern collapse. That, in turn, allows for the formation of the gate pattern with widths less than the widths of the pattern of the imaging layer.
60 citations
TL;DR: In this article, it is shown that an ion-beam deposited diamond-like carbon release coating is a useful alternative, having both stability in a reactive environment and lower adhesion despite its higher surface energy.
Abstract: Low surface energy fluorosilane layers are widely used as release coatings for quartz templates in UV nanoimprint lithography, yet they are generally found to degrade with use. It is found that these layers are chemically attacked when used with UV cured methacrylate and vinyl ether resists, as found previously for acrylate resists, leading to the conclusion that low reactivity and not low surface energy is of importance for effective release layers. It is shown that an ion-beam deposited diamondlike carbon release coating is a useful alternative, having both stability in a reactive environment and lower adhesion despite its higher surface energy.
60 citations
TL;DR: The plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization is developed.
Abstract: We have developed the plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization. An 8 pairs of GaN (10 nm) / Al (12 nm) multilayer is designed as a filter allowing only a part of high wavevector k (evanescent waves) to pass through for interference lithography. The analysis of the influence by the number of DMM layers is presented. 4 pairs of the proposed multilayer can be competent for pattern the minimal feature size down to 21.5 nm at the visibility about 0.4 to satisfy the minimum visibility required with positive resist. Finite-difference time-domain analysis method is used to demonstrate the validity of the theory. (C) 2009 Optical Society of America
60 citations