Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Manufacturing method of semiconductor chip

Abstract: An object is to provide a manufacturing method of a semiconductor chip, by which while a semiconductor wafer is not broken when the semiconductor wafer is transported before plasma dicing is carried out, a time required for the plasma dicing can be shortened, so that a manufacturing efficiency of the semiconductor chips can be improved. After a resist film 6 has been formed on a ground rear plane 1q of a semiconductor wafer 1, partial portions (6a and 1b) of cutting margin areas (6a, 1b, 1c, 3c) along dicing lines 2 are removed by a blade 13 corresponding to a mechanical cutting means, and thickness 't' of remaining cutting margin areas 1c of the semiconductor wafer 1 along a thickness direction thereof are made thinner, which never causes any problem when the semiconductor wafer 1 is transported. Thereafter, all of the remaining cutting margin areas (1c, 3a) are removed by performing a plasma etching process.

Coating apparatus and method

Abstract: A coating apparatus comprises a chuck on which a semiconductor wafer is adhered, a resist liquid supplying system for supplying a resist liquid to the semiconductor wafer, a motor for rotating the semiconductor wafer, thereby spreading the resist liquid over the semiconductor wafer, and a plate, on which the semiconductor wafer is placed, for creating a temperature distribution on the semiconductor wafer.

Requirements on resist layers in deep‐etch synchrotron radiation lithography

Abstract: To fabricate microstructures with heights of several hundred micrometers and great aspect ratios by the LIGA (German acronym for LIthographie, Galvanoformung, Abformtechnik) process thick poly(methylmethacrylate) (PMMA) resist layers are produced on a metallic base plate. The requirements these resist layers must fulfill are reported. It is shown that it is possible to achieve defect‐free structuring with high accuracy using cross‐linked PMMA with little content of residual monomer. Good adherence of microstructures with extremely small diameters, even on polished surfaces, is achieved by using an internal coupling agent which establishes a chemical bond between the substrate surface and the PMMA layer. By modifying the resist composition requirements dependent on product specifications can be fulfilled.

Dry etching method

Abstract: PROBLEM TO BE SOLVED: To provide a wiring pattern excellent in form stability by applying a high-frequency in two steps to a laminated body of Al and Ti group material formed on a base material to suppress plasma damages. SOLUTION: At an etching device 20, an etching gas is guided into a reactive chamber 21 as shown by an allow A, and the etching gas is made into a plasma by the microwave introduced through a waveguide. With the high frequency applied in two steps by a high-frequency power source 27, a semiconductor wafer 28 on an application electrode 25 is etched. The high-frequency power source 27 uses such high-frequency power source with high frequency as excellent in form controllability and such high-frequency power source with low frequency suppressing electron shading effect. By applying high-frequency in two steps, a required amount of remaining resist is obtained. So, only by changing applies frequency, plasma damage is suppressed for a wiring pattern excellent in form stability.