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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a new method is presented which allows further sensitivity improvement through the use of multiple resist layers consisting of PMMA and copolymers of either entirely copolymer with different methacrylic acid content, which can achieve a sensitivity as high as 2×10−6C/cm2 with temperature stability of over 160°C.
Abstract: Copolymers of methyl methacrylate and methacrylic acid have been shown to have higher sensitivity and thermal stability than PMMA as electron resists. A new method is presented which allows further sensitivity improvement through the use of multiple resist layers consisting of PMMA and copolymers of PMMA or entirely copolymers with different methacrylic acid content. Such combinations allow electron resist sensitivity as high as 2×10−6C/cm2 with temperature stability of over 160°C.

59 citations

Journal ArticleDOI
TL;DR: In this article, the authors show that coating a resist layer with optimum thickness is an effective way to enhance the contrast of graphene on various types of substrates and makes single layer graphene visible on most semiconductor and metallic substrates.
Abstract: The visibility of graphene sheets on different types of substrates has been investigated both theoretically and experimentally. Although single layer graphene is observable on various types of dielectrics under an optical microscope, it is invisible when it is placed directly on most of the semiconductor and metallic substrates. We show that coating of a resist layer with optimum thickness is an effective way to enhance the contrast of graphene on various types of substrates and makes single layer graphene visible on most semiconductor and metallic substrates. Experiments have been performed to verify the results on quartz and NiFe-coated Si substrates. The results obtained will be useful for fabricating graphene-based devices on various types of substrates for electronics, spintronics, and optoelectronics applications.

59 citations

Proceedings ArticleDOI
TL;DR: Inpria as mentioned in this paper developed a patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography, which achieved 13nm half-pitch at 35 mJ/cm2 on an ASML's NXE:3300B scanner.
Abstract: Inpria is developing directly patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography Targeted formulations have achieved 13nm half-pitch at 35 mJ/cm2 on an ASML’s NXE:3300B scanner Inpria’s second-generation materials have an absorbance of 20/μm, thereby enabling an equivalent photon shot noise compared to conventional resists at a dose lower by a factor of 4X These photoresists have ~40:1 etch selectivity into a typical carbon underlayer, so ultrathin 20nm films are possible, mitigating pattern collapse In addition to lithographic performance, we review progress in parallel advances required to enable the transition from lab to fab for such a metal oxide photoresist This includes considerations and data related to: solvent compatibility, metals cross-contamination, coat uniformity, stability, outgassing, and rework

59 citations

Patent
14 Mar 1989
TL;DR: In this article, an improved method of fabricating airbridge metal interconnects uses two photoresist layers having different solubility characteristics, which allows for the removal of one resist without affecting the other.
Abstract: An improved method of fabricating airbridge metal interconnects uses two photoresist layers having different solubility characteristics. This allows for the removal of one resist without affecting the other. Thus, the underlying semiconductor structure is protected from subsequent etches of the ground plane metal. Consequently, a greater process latitude allows for obtaining higher device yields in fabricating high frequency semiconductor devices employing airbridge metal interconnects.

59 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that a thin film of SiO2 can be directly reduced to Si under electron beam irradiation and the application of this effect to the fabrication of nanometer-sized Si dots and wires is demonstrated.
Abstract: We have discovered that a thin film of SiO2 can be directly reduced to Si under electron beam irradiation. The application of this effect to the fabrication of nanometer‐sized Si dots and wires is demonstrated. In particular, if SiO2 is irradiated with a high intensity 100 keV electron beam of nanometer scale, then a column of Si is formed which can be as small as 2 nm in diameter. If the beam is moved in a straight line, then a very thin wire of Si is formed. These columns and wires are formed directly under electron irradiation with a dose of ≥3×109 C m−2 and no resists or chemical development are required.

59 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501