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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


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Journal ArticleDOI
TL;DR: In this article, a design and a top-down fabrication method for realizing diamond nanowires in both bulk single crystal and poly-crystalline diamond is presented, where inductively coupled plasma (ICP) reactive ion etching (RIE) with oxygen is used to fabricate the nanowire.

196 citations

Journal ArticleDOI
TL;DR: In this paper, a continuum simulation of polymer flow during nano-imprint lithography (NIL) is presented, and three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio and capillary number.
Abstract: This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio and capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. A characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary- or viscous-driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers and process parameters.

195 citations

Journal ArticleDOI
TL;DR: Achromatic interferometric lithography is the preferred approach for producing large area, spatially coherent 100 nm period gratings and grids as discussed by the authors, which has enabled exposure areas of ≊10 cm2.
Abstract: Achromatic interferometric lithography is the preferred approach for producing large‐area, spatially coherent 100 nm period gratings and grids. We report on improvements to processes which have enabled exposure areas of ≊10 cm2. In addition, we report on the fabrication of 100 nm period free‐standing gold gratings.

193 citations

Proceedings ArticleDOI
TL;DR: A novel double patterning method that does not include transfer etch in between the lithography steps is examined and an assessment will be made whether the proposed technique has the potential to be used in production.
Abstract: Double patterning has become one of the candidates to bring us to the next node of the ITRS-roadmap. As an alternative to immersion lithography with higher index fluids and EUV lithography which both require considerable changes in infrastructure, double patterning makes use of the existing infrastructure. Because of this, double patterning has gained considerable attention during the past few years. It has become a serious candidate to reach the 45 nm node and even the 32 nm node. Most of the currently known double patterning techniques have relatively complex process flows, which may prevent them from being used in production. One of the complicating factors is the use of an etch step in between the two lithography steps. This etch step is necessary to transfer the pattern of the first resist layer into an underlying hard mask before a second exposure can be done. Another complicating element, arising in several known double patterning techniques, is the translation of overlay error in CD-error. This translation occurs when a feature is printed in two exposures, i.e. not features but the spaces between them are patterned, patterning the left and right edge of a feature in different exposures. In this paper, we examine and evaluate a novel double patterning method that does not include transfer etch in between the lithography steps. This method would simplify the double patterning process. Furthermore, each feature is patterned completely in one exposure, for which CD-value is not affected by overlay error. This paper discusses the feasibility of the new double patterning method and compares it to conventional double patterning schemes. Furthermore, an assessment will be made whether the proposed technique has the potential to be used in production.

192 citations

Journal ArticleDOI
TL;DR: The dry film resist can be considered a cheap and fast alternative to SU-8 and is applied for dielectrophoresis-based cell separation systems and a fuel cell reaction chamber with micropillars.
Abstract: Microfluidic networks are patterned in a dry film resist (Ordyl SY300/550) that is sandwiched in between two substrates. The technique enables fabrication of complex biochips with active elements both in the bottom and the top substrate (hybrid chips). The resist can be double bonded at relatively low temperatures without the use of extra adhesives. A postbake transfers the resist into a rigid structure. The resist is qualified in terms of resolution, biocompatibility and fluidic sealing. Fabrication in both a fully equipped cleanroom setting as well as a minimally equipped laboratory is described. The technique is applied for dielectrophoresis-based cell separation systems and a fuel cell reaction chamber with micropillars. The dry film resist can be considered a cheap and fast alternative to SU-8.

192 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501