Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Photoresist undercoat-forming material and patterning process

Abstract: In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it functions as an antireflective coating during short-wavelength exposure, and has etching resistance during substrate processing by etching.

Oxygen plasma etching for resist stripping and multilayer lithography

Abstract: Oxygen‐based plasmas commonly used in resist stripping and multilayer resist patterning are contrasted to highlight the differences involved in these applications. Mechanisms for polymer etching are reviewed, with particular emphasis on silicon‐containing resists proposed for bilayer lithography. While silicon‐containing materials offer a simpler process than trilayer schemes for improving lithographic resolution, considerable differences in etch behavior among these materials have been observed. Further characterization and fundamental understanding are required before widespread acceptance of silicon‐containing resists is achieved.

Silicon nitride single-layer x-ray mask

Abstract: In LP‐CVD process, preparation of silicon nitride film with small tensile stress and low refractive index was investigated as a function of deposition temperature and reactant gas ratio (SiH2Cl2/NH3). The small stress film with low refractive index can be prepared easily by high temperature deposition. Applying the film to an x‐ray mask membrane, a new silicon nitride single‐layer x‐ray mask with a large area window (such as 50 mm in diameter) and high transparency to visible light is realized. Using this mask, a submicron resist pattern (0.5 μm line and space) can be replicated easily by Si–K x‐ray exposure system.

Antireflection film material, substrate having antireflection film and method for forming pattern

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film material having an excellent antireflection effect against exposure at short wavelength, a high etching selection ratio, that is, having a sufficiently fast etching rate with respect to a photoresist film, and having a sufficiently slow etching rate compared to the substrate to be processed, and capable of producing a perpendicular profile of a resist pattern to be formed in the photoresist film on the antireflection film. SOLUTION: The antireflection film material to be used for lithography contains at least a polymer compound having a repeating unit by the copolymerization expressed by general formula (1), or a polymer compound having a repeating unit by the copolymerization expressed by general formula (2) and a polymer compound having a repeating unit by the copolymerization expressed by general formula (3). COPYRIGHT: (C)2005,JPO&NCIPI