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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


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Patent
27 Jun 2000
Abstract: PROBLEM TO BE SOLVED: To provide a negative chemical amplification type resist composition for electron beam or X-ray, which satisfies the properties such as sensitivity, resolution, preservation stability of a resist liquid, PCD(Post Coating Delay) and PED(Post Exposure Delay) stability in the use of electron beam or X-ray by solving the problem on performance improvement technique in the microfabrication of a semiconductor device using electron beam or X-ray. SOLUTION: The negative resist composition for electron beam or X-ray contains a N-hydroxylimide sulfonate compound (A) as a compound generating an acid by the irradiation with electron beam or X-ray, a resin (B) containing a repeating unit containing phenol structure having at least one OH group at the meta-position, having the molecular weight distribution of 1.0-1.5 and insoluble in water and soluble in an alkaline aqueous solution and a cross-linking agent (C) cross-linking with the resin (B) by the action of the acid of (C).

143 citations

Journal ArticleDOI
TL;DR: In this paper, a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a double-layer spin-on resist, metal lift off and Langmuir-Blodgett film deposition was developed.
Abstract: We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.

143 citations

Journal ArticleDOI
TL;DR: Ions are particularly well suited for this because they suffer little or no scattering in the resist, the linewidth is not a strong function of dose (good process latitude), and the resist sensitivity is relatively independent to resist thickness or ion energy as discussed by the authors.
Abstract: Although optical lithography has been extended to far smaller dimensions than was predicted 15 years ago, there are definite physical barriers to extending it to the minimum dimensions of 70 nm that are projected to be required 15 years from now. Both focused, point electron beams and ion beams have been used to write dimensions in resist well below 20 nm, albeit at speeds far too slow for production lithography. Projection systems, which employ a mask and, in effect, produce a large array of beams, can provide both small minimum dimensions and high throughput. Ions are particularly well suited for this because they suffer little or no scattering in the resist, the linewidth is not a strong function of dose (good process latitude), and the resist sensitivity is relatively independent to resist thickness or ion energy. IMS in Vienna, Austria has built two generations of ion projection lithography systems which have demonstrated many of the features needed for high throughput lithography. In these systems a...

143 citations

Patent
26 Dec 1967
TL;DR: A RADIATION SENSITIVE COMPOUND COMPRISES a TETRASUBstituted BORATE ANION and an ORGANIC CATION CONTAINING AN ATOM SELECTED from the Group CONSISTING of NITROGEN, ARSENIC, TIN, ANTIMONY, SULFUR, IODINE, PHOSPHORUS, OXYGEN, TITANIUM, PALLADIUM, CHROMIUM and COBALT as discussed by the authors.
Abstract: A RADIATION SENSITIVE COMPOUND COMPRISES A TETRASUBSTITUTED BORATE ANION AND AN ORGANIC CATION CONTAINING AN ATOM SELECTED FROM THE GROUP CONSISTING OF NITROGEN, ARSENIC, TIN, ANTIMONY, SULFUR, IODINE, PHOSPHORUS, OXYGEN, TITANIUM, PALLADIUM, CHROMIUM AND COBALT. THESE COMPOUNDS CAN BE SPECTRALLY SENSITIZED AND CAN BE USED IN PHOTORESISTS AND FOR LITHOGRAPHY.

143 citations

Journal ArticleDOI
TL;DR: High quality microdisk resonators are demonstrated in a Si(3)N(4) on SiO(2) platform at 652-660 nm with integrated in-plane wrap-around coupling waveguides to enable critical coupling to specific microdisk radial modes.
Abstract: High quality (Q ≈ 6 × 105) microdisk resonators are demonstrated in a Si3N4 on SiO2 platform at 652–660 nm with integrated in-plane wrap-around coupling waveguides to enable critical coupling to specific microdisk radial modes. Selective coupling to the first three radial modes with >20dB suppression of the other radial modes is achieved by controlling the wrap-around waveguide width. Advantages of such pulley-coupled microdisk resonators include single mode operation, ease of fabrication due to larger waveguide-resonator gaps, the possibility of resist reflow during the lithography phase to improve microdisk etched surface quality, and the ability to realize highly over-coupled microdisks suitable for low-loss delay lines and add-drop filters.

142 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501