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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


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Patent
Inatomi Yuichiro1
21 Dec 2010
TL;DR: In this paper, a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent.
Abstract: There is provided a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent. The substrate processing method includes a rinse solution supply process (step S 12 ) for supplying the rinse solution onto the substrate on which the resist pattern is formed; and a rinse solution removing process (steps S 14 to S 16 ) for removing the rinse solution from the substrate in an atmosphere including vapor of a first processing solution that hydrophobicizes the resist pattern.

139 citations

Journal ArticleDOI
TL;DR: In this paper, a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD) is described. But the method is not suitable for high-k materials.
Abstract: We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100-150C using several different precursors and patterned using either PMMA or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A liftoff technique presented here gives sharp step edges with edge roughness as low as ~10 nm. We also measure dielectric constants (k) and breakdown fields for the high-k materials aluminum oxide (k ~ 8-9), hafnium oxide (k ~ 16-19) and zirconium oxide (k ~ 20-29), grown under similar low temperature conditions.

139 citations

Patent
17 Oct 1979
TL;DR: In this paper, a chalcogenide glass resist material, on a substrate on which a microlithographic pattern is to be formed, has a deposit of silver halide on its outer surface.
Abstract: A layer of a chalcogenide glass resist material, on a substrate on which a microlithographic pattern is to be formed, has a deposit of silver halide on its outer surface. By actinic irradiation a latent silver image replicating the desired pattern is formed in the silver halide deposit. This image is developed to a metallic silver, which is used to photodope the resist material for subsequent etching to produce the microlithographic pattern on the substrate. Positive and negative patterns are possible from the same starting laminate. One form of a microlithographic pattern is a mask for producing electronic circuits.

139 citations

Patent
Ronald A. Barr1
27 May 1998
TL;DR: The magneto resistive read head (MRSH) as discussed by the authors was the first read head to have a planar sensing surface with abutting planar side walls orthogonal to the sensing surface.
Abstract: The novel method of fabrication of the present invention allows conventional or other lithography machines to produce very small well defined thin film structures or elements. The present invention provides a method to produce well defined elements, including sensors or read heads well below 0.1 microns, even when using conventional photolithography processes. The presently preferred method for forming the thin film device of the present invention includes depositing and exposing resist so as to define a first thin resist stripe. A portion of the resist is removed leaving a first thin strip covering a portion of the first material layer. The uncovered portion of the first material layer is removed to leave a first material strip. A second resist layer is deposited and exposed so as to define a second thin stripe intersecting the first material strip. A portion of the second resist layer is removed so as to leave a second thin strip of resist covering a portion of the first material strip. The uncovered portion of the first material strip is removed leaving the small thin film element. Typically, the second thin strip of resist is formed perpendicular to the first material strip thereby providing a very small thin film element having planar surfaces with precisely defined squared corners. A feature of the present invention is that it provides a small magneto-resistive read head having a planar sensing surface with abutting planar side walls orthogonal to the sensing surface thereby providing a well defined small sensor element.

139 citations

Patent
24 Nov 1999
TL;DR: An apparatus and method for formation of the upper magnetic pole layer of a thin film magnetic head is described in this paper, which enables the formation with submicron precision of a resist layer for use in forming the upper magnet pole layer, which must necessarily be formed on a surface having a step.
Abstract: An apparatus and method for formation of the upper magnetic pole layer of a thin film magnetic head The presently described method for formation of the upper magnetic pole layer of a thin film magnetic head enables the formation with submicron precision of a resist layer for use in forming the upper magnetic pole layer, which must necessarily be formed on a surface having a step, which can contribute to further improvement of areal recording densities A frame for use in forming the upper magnetic pole layer is formed from multiple resist layers, and the relatively thick lower resist layer is formed by a vacuum thin film formation method

138 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501