Topic
Resist
About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.
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TL;DR: Optically resonant metallic bowtie nanoantennas are utilized as fabrication tools for the first time, resulting in the production of polymer resist nanostructures <30 nm in diameter at record low incident multiphoton energy densities.
Abstract: Optically resonant metallic bowtie nanoantennas are utilized as fabrication tools for the first time, resulting in the production of polymer resist nanostructures <30 nm in diameter at record low incident multiphoton energy densities. The nanofabrication is accomplished via nonlinear photopolymerization, which is initiated by the enhanced, confined optical fields surrounding the nanoantenna. The position, size, and shape of the resist nanostructures directly correlate with rigorous finite-difference time-domain computations of the field distribution, providing a nanometer-scale measurement of the actual field confinement offered by single optical nanoantennas. In addition, the size of the photoresist regions yields strong upper bounds on photoacid diffusion and resist resolution in SU-8, demonstrating a technique that can be generalized to the study of many current and yet-to-be-developed photoresist systems.
375 citations
23 Jun 1997
TL;DR: A new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput is presented.
Abstract: Nanoimprint lithography (NIL) is a new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput. In this paper, we present significant new developments in achieving holes and dots with 6 nm feature size, 40 nm period on silicon, and 10 nm feature size, 40 nm period on a Au substrate. Moreover, we present an application of NIL to the fabrication of nanoscale compact disks (NanoCDs) of 400 Gbits/in/sup 2/ data density.
367 citations
TL;DR: In this paper, a broad range of topics, including history, tools, source, metrology, condenser and projection optics, resists, and masks, are thoroughly reviewed over a broad variety of topics.
Abstract: Extreme ultraviolet lithography (EUVL) was thoroughly reviewed over a broad range of topics, including history, tools, source, metrology, condenser and projection optics, resists, and masks. Since 1988, many studies on EUVL have been conducted in North America, Europe, and Japan, through state sponsored programs and industrial consortiums. To date, no “show stopper” has been identified, but challenges are present in almost all aspects of EUVL technology. Commercial alpha lithography step-and-scan tools are installed with full-field capability; however, EUVL power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 180W IF power, current tools can supply only approximately 55–62W. EUV IF power has been improved gradually from xenon- to tin-discharge-produced plasma or laser-produced plasma. EUVL resist has improved significantly in the last few years, with 25nm 1:1 line/space resolution being produced with approximately 2.7nm (3σ) line edge roughness. A...
363 citations
TL;DR: In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure, providing fast lithography compatible with graphene, with approximately 15 nm feature sizes.
Abstract: We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with approximately 15 nm feature sizes.
359 citations
Patent•
28 Apr 1994TL;DR: In this article, a resist layer is formed on an oxide layer on a substrate, and a photosensitive layer is created on the resist layer and patterned to expose regions of the oxide layer to be removed.
Abstract: A method of etching an oxide layer is disclosed. First, a resist layer is formed on an oxide layer on a substrate. Next, a photosensitive layer is formed on the oxide layer and patterned to expose regions of the oxide layer to be removed. The exposed regions may overlie a nitride layer, and may overlie a structure such as a polysilicon gate. The etch is performed such that polymer deposits on the photosensitive layer, thus eliminating interactions between the photosensitive layer and the plasma. In this way, a simple etch process allows for good control of the etch, resulting in reduced aspect ratio dependent etch effects, high oxide:nitride selectivity, and good wall angle profile control.
343 citations