Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Chemical amplification resists: Inception, implementation in device manufacture, and new developments

Abstract: The chemical amplification concept aimed at dramatically boosting the resist sensitivity was invented at IBM Research in San Jose, CA, in 1980. The sensitivity enhancement is achieved by generating acid by irradiation, which induces a cascade of chemical transformations in a resist film. A chemically amplified resist based on acid-catalyzed deprotection was quickly employed in the mid-80s in manufacture of 1 megabit (Mbit) dynamic random access memory (DRAM) devices by deep ultraviolet (UV) (∼250 nm) lithography in IBM. The unexpectedly high-resolution capability of chemical amplification resists promoted their acceptance in the resist community and the microelectronics industry. All the advanced lithographic technologies (current workhorse 248 nm, maturing 193 nm, and emerging 157 nm, extreme UV, and projection electron beam) depend on chemical amplification resists. This article describes the invention, implementation in device manufacturing, current status, and future perspective of chemical amplification resists. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3863–3870, 2003

Method of performing lithography using cantilever array

Abstract: A lithography system includes a plurality of cantilevers, preferably formed in a silicon wafer. Each cantilever includes a tip located near the free end of the cantilever and an electrical conduction path which extends along the length of the cantilever to the tip. A switch is included in the conduction path to control the voltage at the tip of the cantilever. The array of such cantilevers is positioned adjacent a wafer which is to be patterned, in the manner of an atomic force microscope operating in either the contact or noncontact mode. The cantilever array is scanned over the wafer, preferably in a raster pattern, and the individual switches are operated so as to control an electric current or electric field at the tip of each cantilever. The electric current or field is used to write a pattern on a layer of resist coating the wafer or on the surface of the wafer itself. Alternatively, the lithographic pattern may be formed by using the tip to scribe lines in a thin layer of soft material coating the wafer.

Substrate conformal imprint lithography for nanophotonics

Abstract: The field of nano-photonics studies the interaction and control of light with dielectric, semiconductor and metal structures which are comparable in size or smaller than the vacuum wavelength of light. In this thesis we present Substrate Conformal Imprint Lithography (SCIL) as a novel wafer-scale nanoimprint method with nano-scale resolution which combines the resolution and accuracy of rigid stamps with the flexibility of soft stamp methods. Chapter two describes the SCIL soft nanoimprint process and introduces a novel silica sol-gel imprint resist. A new soft rubber stamp material is described which enables sub-10 nm resolution. We demonstrate that SCIL imprinted patterns have on average less than 0.1 nm distortion and demonstrate sub–50 nm overlay alignment. Chapter 3 demonstrates 30 nm dense structures and features with aspect ratios from 1/640 up to 5. Imprinted sol-gel patterns can be transferred into underlying materials while maintaining sub-10 nm resolution. Two methods are demonstrated to pattern noble metals in particle arrays and sub-wavelength hole arrays. SCIL is applied to produce photonic crystal power InGaN LEDs which exhibit strong modification of the emission pattern. Chapter 4 demonstrates a relatively simple route towards 3D woodpile type photonic crystals. We show a four layer woodpile type structure with 70 nm features on a 240 nm pitch, which is temperature stable up to 1000 C. Chapter 5 demonstrates a novel fabrication route to large area nano hole arrays, which are interesting as angle independent color filters and for sensor applications. A solid state index matched hole array exhibits SPP mediated super resonant transmission. Chapter 6 treats single mode polarization stabilized Vertical Cavity Surface Emitting Lasers (VCSELs). The lasers produced by SCIL exhibit equal performance as devices produced by e-beam. VCSELs with SCIL imprinted sub-wavelength gratings increase the laser efficiency by 29 % compared to conventional gratings. Chapter 7 studies the improved red light absorption in thin film hydrogenated amorphous silicon (a-Si:H) solar cells with plasmonic back mirrors. Thin film a-Si:H solar cells are made on SCIL structured silver mirrors and smooth reference silver mirrors. Patterning increases the external collection efficiency to 6.2 %, an increase of 26 % compared to smooth reference cells. This increase is due to an enhanced absorption in the 600-800 nm wavelength range. Chapter 8 studies the performance of ultra thin silicon solar cells. We use SCIL to pattern substrates which a large variety of nano patterns on which thin film a-Si:H solar cells are processed with a thickness of 160 and 340 nm. A 160 nm thick silicon cell is also made on randomly textured glass. The best patterned cells with 160 nm thick silicon exhibit an external collection efficiency of 6.6 %, equal to that of the best thicker cells and 37.8% better than flat cells. Crucially, some regular patterns exhibited improved efficiency over cells made on randomly textured glass, which we attribute to coupling of non-absorbed light to waveguide modes in the silicon.

Method for manufacturing semiconductor device

Abstract: Provided is a method of manufacturing a semiconductor device capable avoiding occurrence of resist residue on a gate opening portion when forming the gate opening portion finely for injecting an impurity to form an asymmetric transistor during patterning of a gate electrode The method of manufacturing the semiconductor device, in a case of manufacturing a DRAM (Dynamic Random Access Memory) with a memory cell transistor made up of the asymmetric transistor, performs separately a first gate electrode patterning process for forming a high concentration N-type diffusion region to be electrically connected to a capacitive element via a capacitive contact connect, and a gate second electrode patterning process for forming a high concentration N-type diffusion region to be electrically connected to a bit line via a bit contact

Photoacid generator, resist composition, and patterning process

Abstract: The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.