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Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, two enhanced resist reflow methods for the fabrication of microlens arrays and demonstrates their use for integrated biomolecular fluorescence detection on printed microarrays are described.

95 citations

Patent
31 Mar 1997
TL;DR: In this article, a fine pattern forming material which mainly contains one water-soluble resin, a mixture of two or more of water soluble resins, or a copolymer of two-or-more water solins, and causes a crosslinking reaction in the presence of acid is used.
Abstract: PROBLEM TO BE SOLVED: To perform a pattern formation exceeding the wavelength limit in fining of a separating pattern or hole pattern by using a fine pattern forming material which mainly contains a water-soluble resin, a mixture of water-soluble resins, or a copolymer of water-soluble resins, and causes a crosslinking reaction in the presence of acid. SOLUTION: A fine pattern forming material which mainly contains one water-soluble resin, a mixture of two or more of water-soluble resins, or a copolymer of two or more of water-soluble resins, and causes a crosslinking reaction in the presence of acid is used. In the manufacture of a semiconductor device, a resist pattern 1a containing a material generating acid by exposure is covered with a resist 2 containing a material crosslinked in the presence of acid. The acid is generated in the resist pattern 1a by heating or exposure, and a crosslinked layer 4 generated on the interface is formed as the covering layer of the resist pattern 1a to thicken the resist pattern 1a. Thus, the resist hole diameter and the separating width can be reduced.

94 citations

Journal ArticleDOI
TL;DR: In this article, a room-temperature nano-imprinting method using solvent vapor treatment of the polymer film on a substrate was demonstrated, where the mold or mask patterns down to 60 nm can well be transferred onto the polymer print without any problem of polymer adhering to the mold.
Abstract: We demonstrate room-temperature nanoimprint lithography using solvent vapor treatment of the polymer film on a substrate. In this method, the film treated with the solvent vapor is pressed with a mold at room temperature, requiring no heating that has been needed for the lithography. We show that the mold or mask patterns down to 60 nm can well be transferred onto the polymer film without any problem of the polymer adhering to the mold. The vapor treatment of the dried polymer film results in lowering both the viscosity and the glass transition temperature, thereby allowing for the room-temperature lithography. This room-temperature imprinting should make the imprint lithography more valuable for practical applications.

94 citations

Patent
26 Oct 2006
TL;DR: In this paper, the pattern forming method is carried out by irradiating a work coated with a resist with exposure light through a mask in a plurality of shots, developing and etching the work and inspecting the formed pattern, wherein the method includes a step of inspecting the mask after the exposure and development processes and before the etching process.
Abstract: PROBLEM TO BE SOLVED: To prevent a series of works from being made defficient by a mask defect by reliably detecting the presence or absence of a defect in the mask SOLUTION: The pattern forming method is carried out by irradiating a work coated with a resist with exposure light through a mask in a plurality of shots, developing and etching the work and inspecting the formed pattern, wherein the method includes a step of inspecting the mask after the exposure and development processes and before the etching process Resist patterns corresponding to at least two exposure shots are extracted, and the resist pattern corresponding to at least one shot is compared with a master pattern as an inspection reference so as to inspect whether a defect is present in the resist pattern or not and to extract a defective portion Then the other resist pattern is inspected whether a defect is present in the same portion as the above defective portion or not, and if the defect is present in the same portion, the mask used for exposure is determined as defective COPYRIGHT: (C)2007,JPO&INPIT

94 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023275
2022625
2021225
2020398
2019489
2018501