Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Highly conducting patterned Pd nanowires by direct-write electron beam lithography.

Abstract: Palladium hexadecylthiolate is shown to serve as a negative-tone direct-write electron resist to produce nanopatterns down to 30 nm. The written patterns do not deviate much from the precursor in composition, while a post-treatment at 230 °C in air produced metallic Pd nanowires with residual carbon less than 10% and resistivity close to the bulk value, a desirable property of interconnects in nanocircuitry. The as-written patterns contain small nanocrystals (<5 nm) in a hydrocarbon matrix, which upon annealing aggregate to form well-connected networks of larger nanocrystals (5–15 nm), thus giving rise to metallic conductivity.

Plasma processing method and apparatus

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O 2 gas, and ashing the resist film by using a processing gas containing at least an O 2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Chemical amplification resists : History and development within IBM : Optical lithography

Abstract: The chemical amplification concept was invented at IBM Research and quickly brought into use in the production of dynamic random access memory devices in the company. It has remained as an important foundation for the design of advanced resist systems for use in short-wavelength (<300-nm) lithographic technologies.

Method of manufacturing a planar coil using a transparency substrate

Abstract: The present invention uses a glass to act as a substrate. A stencil layer is patterned on the top surface of the substrate. Successively, a copper layer is deposited over the substrate. Next step is to remove the stencil layer. A negative photoresist layer is formed on the copper layer. A negative photoresist layer is processed using a backside exposure of the resist through the transparent substrate. The backside exposure technique uses the self-aligning, conductive copper layer as a mask. A plurality of trenches are then created in the photoresist layer and a second copper layer is electroplated in the trenches to form the planar coils.

Method for forming pattern

Abstract: PROBLEM TO BE SOLVED: To improve the shape of a resist pattern obtained by a chemical shrink method SOLUTION: First, a resist film 102 comprising a resist containing a carboxylic acid group formed on a substrate 101 is exposed by irradiating with exposure light 103 through a mask 104 Then the exposed resist film 102 is developed to form a first resist pattern 102b from the resist film 102 Then the surface of the first resist pattern 102b is soaked in a solution 105 with addition of a reducing agent, and a water-soluble film 106 containing a crosslinking agent which crosslinks with the carboxylic acid group constituting the first resist pattern 102 is formed on the first resist pattern 102b The water-soluble film 106 is heated to crosslink portions of the water-soluble film 106 and the first resist pattern 102a in contact with each other on the side face of the first resist pattern 102a, and the water-soluble film 106 in an unreacted portion is removed, to form a second resist pattern 107 from the first resist pattern 102a with the remaining water-soluble film 106 on the side face of the pattern 102a COPYRIGHT: (C)2005,JPO&NCIPI