Resist

About: Resist is a research topic. Over the lifetime, 40991 publications have been published within this topic receiving 371548 citations.

Multilevel nanoimprint lithography with submicron alignment over 4 in. Si wafers

Abstract: We demonstrate that multilevel nanoimprint lithography (NIL) with submicron alignment over an entire 4 in Si wafer can be achieved Average alignment accuracy of 1 μm with a standard deviation 04 μm in both X and Y directions was obtained in ten consecutive tests of multilevel NIL The multilevel alignment was achieved by aligning the wafer and the mask with an aligner, fixing them with a holder, and imprinting in an imprint machine The issues that are critical to the alignment accuracy, such as relative movement during the press, relative thermal expansion, wafer bending, and resist, are discussed The alignment accuracy currently achieved on the system is limited by the aligning accuracy of the aligner, instead of the process of multilevel NIL

Tin contact barc for tungsten polished contacts

Abstract: The present invention provides improved critical dimension control on oxide films using a titanium nitride (TiN) antireflection coating (ARC). The present invention also provides for improved methods for forming more uniform local interconnects and contact holes through oxide films, by providing a TiN layer as an ARC layer. The TiN ARC layer is used in a process for etching contacts and filling the contacts with a barrier metal made out of Ti or TiN and a tungsten fill. The TiN layer is easily removed during a tungsten polish, which also removes the barrier metal. Additionally, the TiN can serve as a hardmask for the contact etch, since the chemistry is typically selective to TiN. This allows the resist to be thinned down, providing the lithography process with a larger process window.

Defect-Tolerant and Directional Wet-Etch Systems for Using Monolayers as Resists

Abstract: We developed strategies based on self-assembly principles to etch substrates patterned with monolayer resists with high selectivity and etch directionality. Our strategies exploit the defined composition and order of these ultrathin resists and overcome their imperfections. Defects in a monolayer can be healed by additives present in an etch bath. Alternatively, large molecules that cannot diffuse through defects can be employed as etchants. It is also possible to taper structures using the competition between etching and the side-growth of a self-assembling etch barrier, nucleating from the originally patterned monolayer. The application of these concepts lets defect-sensitive monolayers become robust and versatile resists, which should promote their acceptance and use in microtechnology.

Electron beam lithography with monolayers of alkylthiols and alkylsiloxanes

Abstract: Self‐assembled monolayers have been modified with focused electron beams of energy 1–50 keV and scanning tunneling microscopy (STM) based lithography with energies of ∼10 eV. Modifications ∼15 nm in size have been formed by STM and ∼25 nm in size by 50 keV beams. The fact that these materials work as self‐developing electron beam resists is demonstrated by both atomic force microscopy imaging and pattern transfer using conventional wet etchants. Patterns have been transferred to silicon substrates to a depth of ≳120 nm with a multistep wet etching process. The mechanism of electron beam modification has also been explored to better design future monolayer processes.

Ultrathick SU-8 mold formation and removal, and its application to the fabrication of LIGA-like micromotors with embedded roots

Abstract: In this study, a novel method to completely remove crosslinked SU-8 without remnants of the resist or destroying the electroplated microstructures was utilized. The LIGA-like fabrication of a side-driven electrostatic micromotor was employed as an example to describe polymerized SU-8 resist removal. Using near-UV light, nickel components of the micromotor were electroplated 160 μm in a 300 μm-thick SU-8 mold. A comparison of various approaches based on a commercial remover was performed during the mold removal process. Experimental results showed that components having 1 μm-deep substructures embedded in the substrate could provide stronger structures to withstand the internal stress due to the photoresist deformation. In addition, when the height of the electroplated structure was below two-thirds of the photoresist mold thickness, the net clamping force on the resist could be effectively reduced to make the removal of SU-8 with heated remover successfully. The rotor and the stator with embedded roots were released cleanly and thereby, assembled to form a high-aspect-ratio micromotor. The technique of SU-8 removal and LIGA-like process presented herein can be applied to the fabrication of other high-powered microactuators.