Topic
Responsivity
About: Responsivity is a(n) research topic. Over the lifetime, 9918 publication(s) have been published within this topic receiving 186118 citation(s).
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TL;DR: A gain of ∼10(8) electrons per photon and a responsivity of ∼ 10(7) A W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots is demonstrated.
Abstract: A phototransistor in which electric charges are absorbed by colloidal quantum dots and circulated in graphene exhibits high values for gain, responsivity and specific detectivity.
1,627 citations
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TL;DR: In this article, the authors exploit the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity.
Abstract: Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light absorption efficiency and to provide a gain mechanism where multiple charge carriers are created from one incident photon. Here, we take advantage of the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity. Exploiting charge transfer between the two materials, we realize for the first time, graphene-based phototransistors that show ultrahigh gain of 10^8 and ten orders of magnitude larger responsivity compared to pristine graphene photodetectors. These hybrid graphene-quantum dot phototransistors exhibit gate-tunable sensitivity, spectral selectivity from the shortwave infrared to the visible, and can be integrated with current circuit technologies.
1,462 citations
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Abstract: The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors. Owing to their excellent optoelectronic properties, Ge-on-Si photodetector can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and low-cost infrared imaging at low power consumption. This Review covers the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.
1,086 citations
TL;DR: An ultra-broadband photodetector design based on a graphene double-layer heterostructure is reported, demonstrating room-temperaturePhotodetection from the visible to the mid-infrared range, with mid- Infrared responsivity higher than 1 A W(-1), as required by most applications.
Abstract: A pair of stacked graphene layers separated by a tunnel barrier show sensitive photodetection capabilities.
870 citations
TL;DR: In this article, a chip-integrated graphene photodetector with a high responsivity of over 0.1 A W−1, high speed and broad spectral bandwidth is realized through enhanced absorption due to near-field coupling.
Abstract: A chip-integrated graphene photodetector with a high responsivity of over 0.1 A W−1, high speed and broad spectral bandwidth is realized through enhanced absorption due to near-field coupling. Under zero-bias operation, response rates above 20 GHz and an instrumentation-limited 12 Gbit s−1 optical data link are demonstrated.
867 citations