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Showing papers on "Responsivity published in 1976"


Journal ArticleDOI
TL;DR: In this paper, the authors describe the fabrication of contacts of R = 100-1000 Ω with I c R -values of 900-500 μV for wide-band detection with Josephson junction.

15 citations


Journal ArticleDOI
J.J. Goedbloed1, J. Joosten1
TL;DR: In this article, it was shown theoretically and verified experimentally that a photodiode, illuminated by monochromatic light of varying wavelength, may show interference ripples in its responsivity, owing to multiple reflections between the diode front and back contact.
Abstract: It is shown theoretically, and verified experimentally, that a photodiode, illuminated by monochromatic light of varying wavelength, may show interference ripples in its responsivity, owing to multiple reflections between the diode front and back contact. The amplitude of the ripples is found to increase linearly with the avalanche multiplication factor.

12 citations


Journal ArticleDOI
TL;DR: In this paper, a special boron diffusion process was used to produce photo-FETs with high blue and UV sensitivity, and the spectral response curve and the large-signal behavior of the FET's are strongly dependent on the operating conditions.
Abstract: Silicon photodiodes and photo-FET's with high blue and UV sensitivity have been produced by a special boron diffusion process. Diodes with a junction depth around 0.2 µm exhibit a responsivity of 0.1 A/W at 253 nm; the maximum responsivity (with a quantum efficiency close to 100 percent) is reached at 440 nm. The responsivity of the photo-FET's operating in the photoconductive mode (V GS = 0) exceeds 103A/W at 350 nm. The spectral response curve and the large-signal behavior of the photo-FET's are strongly dependent on the operating conditions.

10 citations


Journal ArticleDOI
TL;DR: In this paper, a new technique to obtain high quality detector arrays has been developed by the use of reactive sputtering of PbTc and PbxSn1−xTe layers in an oxygen-tellurium-argon plasma atmosphere.

9 citations


Journal ArticleDOI
TL;DR: The analysis indicates that operation of pyroelectric vidicons in the chopping mode rather than the panning mode provides for better image quality and a minimum scanning velocity, nu(min) = (2pikappa)/a, is desirable for good resolution in the scanning direction and acceptable levels of crosstalk between elements.
Abstract: The performance characteristics, such as responsivity and spatial resolution, of pyroelectric devices, are calculated by employing a two-dimensional thermal modulation transfer function. The thermal analysis is done for the use of a freely suspended wafer of pyroelectric material, a situation encountered in monolithic detector arrays and pyroelectric vidicon targets. Measurements of the frequency dependence of the voltage responsivity and thermal crosstalk from detector elements, fabricated on LiTaO3 wafers, are found to be in excellent agreement with the theoretical calculations. It is concluded that for linearly scanned arrays, a minimum scanning velocity, vmin = (2πκ)/a, where κ is the material diffusivity and 2a the dimension of square array element, is desirable for good resolution in the scanning direction and acceptable levels of crosstalk between elements. The analysis also indicates that operation of pyroelectric vidicons in the chopping mode rather than the panning mode provides for better image quality.

8 citations


Journal ArticleDOI
TL;DR: In this paper, a p-type compensated germanium bolometer operating at 0.1 K was found to have a responsivity of 2.8×107 V/W and an estimated limiting NEP of 3x10-16 W/(Hz) 1 2.

6 citations


Journal ArticleDOI
TL;DR: In this article, the authors extended these results to moderate and large values of the ratio of the gas to solid thermal responsivity by treating the non-dimensional activation temperature as a large parameter in an asymptotic analysis.

5 citations


Journal ArticleDOI
TL;DR: In this article, the authors employed microwave biasing techniques to construct a sensitive, wide bandwidth GaAs submillimeter detection system, which achieved an NEP of 3.2 × 10−10W/Hz and a responsivity of 3 × 103 V/W.

4 citations


Journal ArticleDOI
TL;DR: In this paper, hot electron photoconductive detectors for the submillimeter to millimeter wavelength region have been constructed using high purity n-type indium antimonide with ND-NA~1014 and their characteristics such as spectral responsivity, responsivity dependence on the chopping frequency, noise and noise equivalent power (NEP), etc.
Abstract: Hot electron photoconductive detectors for the submillimeter to millimeter wavelength region have been constructed using high purity n-type indium antimonide with ND–NA~1014 and their characteristics such as spectral responsivity, responsivity dependence on the chopping frequency, noise and noise equivalent power (NEP), etc. have been investigated. The noise decreases according to 1/fy(y≈1.4) with increasing chopping frequency f. NEP's of 3.8×10-13 W/Hz½ at 4.2 K and 3.1×10-13 W/Hz½ at 1.7 K are obtained at an optimum wavelength and at a chopping frequency of 1350 Hz. These values are inferior to those of an ideal photoconductor by a factor of about 4.

3 citations


Patent
15 Jan 1976
TL;DR: In this article, a method of fabricating a photoconductive detector of increased responsivity, such as an infrared detector, from a slab of N-type, intrinsic bulk semiconductor material comprises shielding part of the detector active area between the positive and negative contacts with a material limiting photon exposure of the active area.
Abstract: A method of fabricating a photoconductive detector of increased responsivity, such as an infrared detector, from a slab of N-type, intrinsic bulk semiconductor material comprises shielding part of the detector active area between the positive and negative contacts with a material limiting photon exposure of the active area to retain a reduced detector active area sufficiently spaced from the negative contact to permit negligible loss in responsivity due to recombination of the photogenerated hole carriers at the negative contact.

2 citations


Journal ArticleDOI
TL;DR: In this article, the authors compared thin and thick detectors with respect to the anisotropy of the dielectric constant and found that the responsivity for the thick detectors is about 16 of the thin detectors.

01 Aug 1976
TL;DR: In this article, the operation and characteristics of the impurity doped infrared sensing MOSFET (IRFET) are described and the experimental results obtained on gold-, indium-, and gallium-doped devices for use in the near, middle, and far infrared wave length regions respectively.
Abstract: : Operation and characteristics of the impurity doped infrared sensing MOSFET (IRFET) are described. Responsivities of over 1000 amps/joule have been observed with only small channel width to length ratios and large area devices. Much higher responsivities would be possible with smaller area devices. In the case of indium- and gallium-doped devices it has been shown that quantum efficiencies in the range 1.0 to 10.0% can be achieved by using substrates with low boron dopings. The infrared sensing MOSFET(IRFET) is a detector, integrating element, and amplifier all combined in one device structure. As such it is distinctly different than other types of infrared detectors and possesses many very unique characteristics. When compared to charged coupled device scanned photoconductors two of these are: the responsivity of the IRFET and uniformity of responsivity do not depend upon carrier life-time and residual impurity concentrations; and (2) the IRFET has a nondestructive D.C. or static memory type readout as opposed to the A.C. or dynamic memory type of CCD's. This report describes in detail the experimental results obtained on gold-, indium-, and gallium-doped devices for use in the near, middle, and far infrared wave length regions respectively. Equations describing the operation of the devices have been compared to the observed thermal and optical response characteristics.

01 Nov 1976
TL;DR: In this article, the operation and characteristics of the impurity doped infrared sensing MOSFET (IRFET) are described and the experimental results obtained on gold-, indium-, and gallium-doped devices for use in the near, middle, and far infrared wavelength regions respectively.
Abstract: : Operation and characteristics of the impurity doped infrared sensing MOSFET (IRFET) are described. Responsivities of over 1,000 amps/joule have been observed with only small channel width to length ratios and large area devices. Much higher responsivities would be possible with smaller area devices. In the case of indium- and gallium-doped devices it has been shown that quantum efficiencies in the range 1.0 to 10.0% can be achieved by using substrates with low boron dopings. The infrared sensing MOSFET (IRFET) is a detector, integrating element, and amplifier all combined in one device structure. As such it is distinctly different than other types of infrared detectors and possesses many very unique characteristics. When compared to CCD scanned photoconductors two of these are: (i) the responsivity of the IRFET and uniformity of responsivity do not depend upon carrier life-time and residual impurity concentrations (ii) the IRFET has a nondestructive D.C. or static memory type readout as opposed to the A.C. or dynamic memory type of CCD's. This report describes in detail the experimental results obtained on gold-, indium-, and gallium-doped devices for use in the near, middle, and far infrared wavelength regions respectively.

29 Jan 1976
TL;DR: In this paper, the degradation of the modulation transfer function due to minority carrier diffusion effects was analyzed for both frontside and backside illuminated devices, and it was concluded that backside illumination is the best approach to device fabrication from the standpoint of carrier diffusion degradation.
Abstract: : Analytical results for the degradation of charge-coupled-imager modulation transfer function due to minority carrier diffusion effects are given for broadband optical sources. Both frontside and backside illuminated devices are considered. The effect of restricting the optical band on both broadband modulation transfer function and responsivity is considered. It is concluded that best imager performance is obtained for the full optical band (0.4-1.2 micrometers), and that backside illumination is the best approach to device fabrication from the standpoint of carrier diffusion degradation of modulation transfer function.

01 Dec 1976
TL;DR: In this paper, the response of Josephson junctions to microwave and far infrared radiation is studied, and the dependence of the responsivity of these current on film thickness over a range from 50 A to 500 A is studied.
Abstract: : The response of Josephson junctions to microwave and far infrared radiation is studied. Junctions are formed by pressing a Nb or Nb-Ti pointed wire onto a Nb thin film which in turn is pressed against the open end of a waveguide. Electromagnetic radiation is applied through the back of the film so that only the wave magnetic field is coupled to the junctions. The change of the d.c. Josephson current is monitored at different levels of microwave power over a frequency range from 22GHz to 105GHz. The dependence of the responsivity of these current on film thickness over a range from 50 A to 500 A is studied. The observed responsivity agrees very well with that predicted by theory. Higher responsivity is observed for thinner films and lower microwave frequencies.

Journal ArticleDOI
TL;DR: In this paper, commercial silicon surface-barrier diodes of the DKPs type, with a sensitive surface area of 0.5 cm in diameter, are suggested as simple and convenient laser radiation detectors.
Abstract: Commercial silicon surface-barrier diodes of the DKPs type, with a sensitive surface area of 0.5–2.5 cm in diameter, are suggested as simple and convenient laser radiation detectors. This type of detector can operate in the wavelength range 0.27–1.2 μ with a time constant not exceeding 10 nsec. The absolute responsivity, measured for a batch of diodes, is 0.1–0.3 and 0.005–0.01 A/W at wavelengths of 0.63 and 1.15 μ, respectively. The responsivity of different points on the surface varies by no more than 5%.