Showing papers on "Responsivity published in 2010"

High-performance Ge-on-Si photodetectors

Abstract: The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors. Owing to their excellent optoelectronic properties, Ge-on-Si photodetector can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and low-cost infrared imaging at low power consumption. This Review covers the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.

Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect

Abstract: We demonstrate the piezoelectric effect on the responsivity of a metalsemiconductormetal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a0.36% compressive strain in the wire, which effectively tuned the Schottky barrier height at the contact by the produced local piezopotential. After a systematic study on the Schottky barrier height change with tuning of the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical, and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than 5-fold for pW levels of light detection.

Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization

Abstract: Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V ? L ? = 2.56 V·cm, 10 Gb/s). Low-voltage operation (V RF = 1 V pp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (V Bias = 0 V) operation.

Thin-Film Schottky Barrier Photodetector Models

Abstract: Phenomenological models for the internal quantum efficiency of Schottky barrier photodetectors suitable for the detection of optical radiation below the bandgap energy of the semiconductor are presented and discussed. The detection mechanism is internal photoemission from the metal film into the semiconductor substrate. Three detector configurations are considered: the first consists of a thick metal film on a semiconductor substrate forming a single Schottky barrier; the second consists of a thin metal film on a semiconductor substrate also forming a single Schottky barrier; and the third consists of a thin metal film buried in semiconductor and forming two Schottky barriers (one along each metal-semiconductor interface). In the three cases, illumination through the semiconductor substrate is assumed. The two thin-film configurations provide enhanced internal quantum efficiencies due to multiple hot carrier reflections within the metal film, with the double-barrier case providing the greatest enhancement due to emission over two barriers. The models proposed are based on assessing the emission probability of hot carriers as a function of their energy, taking into account multiple reflections within the metal film and energy losses due to internal scattering (e.g., with phonons and cold carriers). The thin-film single-barrier model was tested via comparisons with responsivity measurements reported in the literature for PtSi/p-Si and Pd2Si/p-Si detectors.

Ultraviolet Photodetectors Based on Anodic TiO2 Nanotube Arrays

Abstract: Anodic TiO2 nanotube arrays prepared by electrochemical anodization were used to fabricate ultraviolet (UV) photodetectors. The devices annealed at 450 degrees C exhibit the highest UV-sensitive photoconductance due to the pure anatase phase of the TiO2. The large surface area and one-dimensional nanostructure of the TiO2 nanotubes lead to great photosensitivity (more than 4 orders of magnitude) and fast response with rise time and decay time of 0.5 and 0.7 s, respectively. High responsivity of 13 A/W is found under 1.06 mW/cm(2) UV (lambda = 312 nm) illumination at 2.5 V bias, which is much higher than those of commercial UV photodetectors. The high responsivity mainly comes from the internal gain induced by the desorption of oxygen from the nanotube surfaces and the reduction of the Schottky barrier at TiO2/Ag contact under UV illumination. The devices are promising for large-area UV photodetctor applications.

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

Abstract: We demonstrate two modified uni-traveling carrier photodiode (MUTC) structures that incorporate a charge or “cliff” layer to attain high-saturation-current. MUTC1 achieved responsivity of 0.82 A/W and 134 mA saturation current at -6-V and 20 GHz. The MUTC2 structure, which has higher doping density in the cliff layer and thinner absorption region, exhibited a higher saturation current of 144 mA (at -5-V) and an improved 3 dB bandwidth of 24 GHz; however, the responsivity was reduced to 0.69 A/W. For MUTC2, a high-saturation-current bandwidth product of 3456 GHz mA has been achieved. An intermodulation distortion figure of merit, IP3, > dBm at 20 GHz was observed for both MUTC structures.

Plasmonic enhanced quantum well infrared photodetector with high detectivity

Abstract: We report a normal-incident quantum well infrared photodetector (QWIP) strongly coupled with surface plasmon modes. A periodic hole array perforated in gold film was integrated with In0.53Ga0.47As/InP QWIP to convert normal-incident electromagnetic waves into surface plasmon waves, and to excite the intersubband transition of carriers in the quantum wells. The peak responsivity of the photodetector at ∼8 μm was ∼7 A/W at the bias of 0.7 V at 78 K with the peak detectivity as high as ∼7.4×1010 cm Hz1/2/W. The full width at half maximum of the response spectrum was only ∼0.84 μm due to a narrow plasmonic resonance.

Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors

Abstract: Nanowire photodetectors can perform exceptionally well due to their unique properties arising from the nanowire geometry. Here we report on the phenomenal responsivity and extended spectral range of scalable, vertically etched, silicon nanowire photodetector arrays defined by nanoimprint lithography. The high internal gain in these devices allows for detection at below room temperatures of subfemtowatt per micrometer visible illumination and picowatt infrared illumination resulting from band to surface state generation.

Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire

Abstract: We report the demonstration of single-nanowire photodetectors relying on carrier generation in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of different thicknesses are analyzed and compared to a reference binary n-i-n GaN nanowire sample. The responsivity of a single wire QDisc detector is as high as 2 × 103 A/W at λ = 300 nm at room temperature. We show that the insertion of an axial heterostructure drastically reduces the dark current with respect to the binary nanowires and enhances the photosensitivity factor (i.e., the ratio between the photocurrent and the dark current) up to 5 × 102 for an incoming light intensity of 5 mW/cm2. Photocurrent spectroscopy allows identifcation of the spectral contribution related to carriers generated within large QDiscs, which lies below the GaN band gap due to the quantum confined Stark effect.

A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky Diode

Abstract: A quasi-optical broadband terahertz detector using a zero bias Schottky diode mounted on a self-complimentary sinuous antenna has been developed. Design and characterization of this detector are described. Measurements show that a responsivity of 300-1000 V/W covering the frequency range of 150-440 GHz has been achieved. The detector performance has been compared to waveguide detectors covering four frequency bands up to 600 GHz. A recent measurement at 600-900 GHz yielded the same output voltage as a waveguide detector. The noise equivalent power level of this detector is estimated to be 5-20 pW/√(Hz) based on the measurements of similar detectors.

A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS

Abstract: A passive imaging receiver operating in the W-band around 90 GHz has been realized in a digital 65-nm CMOS process. The circuit, occupying only 0.41 mm2, integrates an SPDT switch with 4.2 dB loss and 25 dB isolation, a five-stage telescopic cascode LNA with 27 dB gain at 90 GHz, and a W-band square-law detector, all consuming less than 33 mA from 1.2 V. A version of the receiver without the input SPDT switch has a peak responsivity of over 200 kV/W and a minimum NEP of less than 0.1 pW/ Hz. The full Dicke radiometer, which includes the input switch, achieves a responsivity of 90 kV/W and an NEP of 0.2 pW/ Hz. This work represents the first W-band passive imaging receiver to be implemented in standard CMOS with this level of integration.

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Abstract: We report here a heterojunction band gap engineered type-II InAs/GaSb strained layer superlattice photodiode for longwave infrared detection. The reported PbIbN architecture shows improved performance over conventional PIN design due to unipolar current blocking layers. At 77 K and Vb=−0.25 V, responsivity of 1.8 A/W, dark current density of 1.2 mA/cm2, single pass quantum efficiency of 23%, and shot noise limited detectivity (D∗) of 8.7×1010 cm Hz1/2 W−1 (λc=10.8 μm) were measured. The device demonstrated background limited performance at 100 K under 300 K for 2π field of view.

Very black infrared detector from vertically aligned carbon nanotubes and electric-field poling of lithium tantalate.

Abstract: Vertically aligned multiwall carbon nanotubes were grown by water-assisted chemical vapor deposition on a large-area lithium tantalate pyroelectric detector. The processing parameters are nominally identical to those by which others have achieved the "world's darkest substance" on a silicon substrate. The pyroelectric detector material, though a good candidate for such a coating, presents additional challenges and outcomes. After coating, a cycle of heating, electric field poling, and cooling was employed to restore the spontaneous polarization perpendicular to the detector electrodes. The detector responsivity is reported along with imaging as well as visible and infrared reflectance measurements of the detector and a silicon witness sample. We find that the detector responsivity is slightly compromised by the heat of processing and the coating properties are substrate dependent. However, it is possible to achieve nearly ideal values of detector reflectance uniformly less than 0.1% from 400 nm to 4 microm and less than 1% from 4 to 14 microm.

Traveling-Wave Metal/Insulator/Metal Diodes for Improved Infrared Bandwidth and Efficiency of Antenna-Coupled Rectifiers

Abstract: We evaluate a technique to improve the performance of antenna-coupled diode rectifiers working in the IR. Efficient operation of conventional, lumped-element rectifiers is limited to the low terahertz. By using femtosecond-fast MIM diodes in a traveling-wave (TW) configuration, we obtain a distributed rectifier with improved bandwidth. This design gives higher detection efficiency due to a good match between the antenna impedance and the geometry-controlled impedance of the TW structure. We have developed a method for calculating the responsivity of the antenna-coupled TW detector. Three TW devices, made from different materials, are simulated to obtain their impedance and responsivity at 1.5, 3, 5, and 10 μm wavelengths. The characteristic impedance of a 100-nm-wide TW is in the range of 50 Ω and has a small variation with frequency. A peak responsivity of 0.086 A/W is obtained for the Nb-Nb2 O5 -Nb TW diode at 3-μm wavelength. This corresponds to a quantum efficiency of 3.6% and is a significant improvement over the antenna-coupled lumped-element diode rectifiers. For IR imaging, this results in a normalized detectivity of 4 × 106 Jones at 3 μm. We have identified several ways for improving the detectivity of the TW detector. Possible methods include decreasing the diode resistance, reducing the noise, and increasing the effective antenna area.

Metal−Oxide−Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain

Abstract: A Au/MgO/MgZnO metal−oxide−semiconductor-structured photodetector was fabricated. The responsivity of the photodetector was about 2 orders of magnitude larger than that of the Au/MgZnO metal−semico...

High responsivity ultraviolet photodetector realized via a carrier-trapping process

Abstract: Metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films. The responsivity of the photodetector can reach 26 000 A/W at 8 V bias, which is the highest value ever reported for a semiconductor ultraviolet photodetector. The origin of the high responsivity has been attributed to the carrier-trapping process occurred in the metal-semiconductor interface, which has been confirmed by the asymmetric barrier height at the two sides of the metal-semiconductor interdigital electrodes. The results reported in this paper provide a way to high responsivity UV photodetectors, which thus may address a step toward future applications of UV photodetectors.

280-GHz schottky diode detector in 130-nm digital CMOS

Abstract: A 2×2 array of Schottky-barrier diode detectors with an on-chip patch antenna and a preamplifier is fabricated in a 130-nm logic CMOS process. Each detector cell can detect the 25-kHz modulated 280-GHz radiation signal with a measured responsivity and noise equivalent power (NEP) of 21kV/W and 360pW/ √Hz, respectively. At 4-MHz modulation frequency, NEP should be about 40pW/ √Hz. At supply voltage of 1.2V, the detector consumes 1.6mW. By utilizing the detector, a millimeter-wave image is constructed, demonstrating its potential application in millimeter-wave and THz imaging.

Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides

Abstract: We report a vertical p-i-n thin-film germanium photodetector integrated on 3microm thick large core silicon-on-insulator (SOI) waveguides. The device demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguides. The germanium width and thickness are carefully designed to achieve high responsivity yet retain high-speed performance. Even with fiber coupling loss included, the device has demonstrated greater than 0.7A/W external responsivity at 1550nm for TM polarization and 0.5A/W for TE polarization. A low dark current of 0.2microA at -0.5V bias is reported. 3dB bandwidths of 12GHz and 8.3GHz at -2.5V bias are also reported for 100microm and 200microm long devices, respectively. The device can cover the communication wavelength spectrum up to 1620nm with a relatively flat responsivity of >0.5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth.

Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire

Abstract: We report on the visible-blind deep-ultraviolet (DUV) photodetectors with metal-semiconductor-metal (MSM) Schottky contacts based on individual Zn2GeO4 nanowire single-crystals. At an 8 V bias voltage, the device shows an extremely low dark current (<0.1 pA), a responsivity of 38.3 A/W (corresponding gain ∼200), a high DUV-to-visible discrimination ratio up to ∼104, and a relatively fast response time upon 245 nm DUV illumination. By analyzing the light-intensity-dependent photocurrent generation and carrier transport, the photogenerated holes trapped in Schottky barrier and shrinking of depletion region under DUV illumination at the metal/Zn2GeO4 interface are proposed for the carrier injection and the photocurrent gain.

Interband-cascade infrared photodetectors with superlattice absorbers

Abstract: Interband-cascade infrared photodetectors (ICIPs), composed of discrete superlattice absorbers, are demonstrated at temperatures up to 350 K with a cutoff wavelength near 5 μm at 80 K to beyond 7 μm above room temperature. The peak responsivity exceeds 200 mA/W, higher than the values reported from early interband cascade laser structures, suggesting a significantly enhanced quantum efficiency of the superlattice absorbers. A theoretical model, originally developed for quantum well infrared photodetectors (QWIPs), is applied to ICIPs to analyze their device performance. The Johnson-limited and background-limited detectivities are extracted and indicate that background-limited performance temperatures for two ICIP structures are 126 and 105 K at 5 μm. It is expected that optimized ICIPs will provide improved performance by combining the advantages of conventional photodiodes and the discrete nature of QWIPs and IC lasers.

Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

Abstract: We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed device model, we calculate the detector dc responsivity and detectivity as functions of the number of graphene layers and geometrical parameters and show that the dc responsivity and detectivity can be fairly large, particularly, at the lower end of the terahertz range at room temperatures. Due to relatively high quantum efficiency and low thermogeneration rate, the photodetectors under consideration can substantially surpass other terahertz and IR detectors. Calculations of the detector responsivity as a function of modulation frequency of THz and IR radiation demonstrate that the proposed photodetectors are very fast and can operate at the modulation frequency of several tens of gigahertz.

ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

Abstract: We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼5 μA and ∼150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm/R550 nm) of ∼70 at an operating bias of −3 V.

AlGaN solar-blind avalanche photodiodes with high multiplication gain

Abstract: We report the fabrication and characterization of the solar-blind AlGaN avalanche photodiodes grown by metal-organic chemical vapor deposition on c-plane sapphire substrate. The fabricated devices with 100 μm diameter active area exhibit a peak responsivity of 79.8 mA/W at 270 nm and zero bias, corresponding to an external quantum efficiency of 37%. Multiplication gains as high as more than 2500 were obtained in these devices.

High performance organic phototransistor based on regioregular poly(3-hexylthiophene)

Abstract: We fabricated solution processed organic phototransistors (OPT) by drop casting regioregular poly 3-hexylthiophene (P3HT) from three different solvents: p-xylene, dichlorobenzene and chloroform. The best performance was obtained for films drop-casted from p-xylene with a maximum photosensitivity (P) of 3.8 × 103 and responsivity (R) of 250 A W − 1 under white light illumination. For films deposited from dichlorobenzene and chloroform the values of P were 1.1 × 103 and 30, respectively, while the values of R were 150 and 35, respectively. The maximum responsivity value reported here is at least one order of magnitude higher than that of previously reported solution processed OPT devices. By analyzing the absorption spectra of different films, we conclude that the better device performance of OPT from p-xylene is due to better crystallinity of P3HT. Demonstration of high performance OPTs is a significant step forward in integrating these devices in various optoelectronic circuits.

Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles.

Abstract: We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W(-1) at - 1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 10(2). The dependence on the incident power and the operation speed of the photodetector are discussed.

Integrated plasmonic lens photodetector

Abstract: Metal-semiconductor-metal (MSM) photodetectors may see increased responsivity when a plasmonic lens is integrated with the photodetector. The increased responsivity of the photodetector may be a result of effectively ‘guiding’ photons into the active area of the device in the form of a surface plasmon polariton. In one embodiment, the plasmonic lens may not substantially decrease the speed of the MSM photodetector. In another embodiment, the Shottkey contacts of the MSM photodetector may be corrugated to provide integrated plasmonic lens. For example, one or more of the cathodes and anodes can be modified to create a plurality of corrugations. These corrugations may be configured as a plasmonic lens on the surface of a photodetector. The corrugations may be configured as parallel linear corrugations, equally spaced curved corrugations, curved parallel corrugations, approximately equally spaced concentric circular corrugations, chirped corrugations or the like.

Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection

Abstract: We describe, model and demonstrate a tunable micro-ring resonator integrated monolithically with a photodiode in a silicon waveguide device. The photodiode is made sensitive to wavelengths at and around 1550nm via the introduction of lattice damage through selective ion implantation. The ring resonator enhances detector responsivity in a 60 μm long waveguide photodiode such that it is 0.14 A/W at −10Vbias with less than 0.2 nA leakage current. The device is tunable such that resonance (and thus detection) can be achieved at any wavelength from 1510 – 1600 nm. We also demonstrate use of the device as a digital switch with integrated power monitoring, 20 dB extinction, and no optical power tapped from the output path to the photodiode. A theoretical description suggests that for a critically coupled resonator where the round trip loss is dominated by the excess defects used to mediate detection, the maximum responsivity is independent of device length. This leads to the possibility of extremely small detector geometries in silicon photonics with no requirement for the use of III-V materials or germanium.

High-Performance Single CdS Nanobelt Metal-Semiconductor Field-Effect Transistor-Based Photodetectors

Abstract: We have demonstrated for the first time that under suitable gate biases, single CdS nanobelt (NB) metal-semiconductor field-effect transistors (MESFETs) can serve as high-performance photodetectors. When a gate voltage near to the threshold voltage of the MESFET under illumination is supplied, the single NB MESFET-based photodetectors exhibit high photosensitivity, such as ultrahigh photoresponse ratio (Ilight/Idark ≈ 2.7 × 106) (among the best values reported so far for single NB/NW photodetectors), high current responsivity (∼2.0 × 102 A/W), high external quantum efficiency (∼5.2 × 102), and fast photoresponse: with rise and decay times of ∼137 and ∼379 μs, respectively. The working principle of the single NB MESFET-based photodetectors as well as the reasons for the enhancement in performance is discussed. Our accomplishment can be easily extended to other 1D semiconductor nanomaterials. All the above results show that the single NB/nanowire (NW) MESFETs can be a promising candidate for novel photodete...

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Abstract: InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.

ZnO-based interdigitated MSM and MISIM ultraviolet photodetectors

Abstract: The paper reports the fabrication and characterization of ZnO-based interdigitated metal–semiconductor–metal (MSM) and metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors. The ZnO thin film was grown on a p-type Si 1 0 0 substrate by the sol–gel technique. With applied voltage in the range from −3 to 3 V we estimated the contrast ratio, responsivity, detectivity and quantum efficiency of the photodetectors for an incident optical power of 0.1 mW at 365 nm ultraviolet wavelength. The I–V characteristics were studied and the parameters such as ideality factor, leakage current and barrier height were extracted from the measured data. For Au/Cr/SiO2/ZnO/SiO2/Al (MISIM) structure the product (mχ) of the tunnelling effective electron mass (m) and the mean tunnelling barrier height (χ) was also extracted.