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Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


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Journal ArticleDOI
TL;DR: In this paper, the InGaAs-InP modified charge compensated uni- traveling carrier photodiodes with both absorbing and nonabsorbing depleted region are demonstrated, and the fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W).
Abstract: InGaAs-InP modified charge compensated uni- traveling carrier photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz bandwidth and 25-dBm RF output power and a 20-mum-diameter photodiode exhibited 30-GHz bandwidth and 15.5-dBm RF output power. The saturation current-bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.

91 citations

Journal ArticleDOI
TL;DR: It is found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity.
Abstract: Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW–1 and a noise equivalent power of 7.8 × 10–12 W/√Hz at 1440 nm.

91 citations

Journal ArticleDOI
TL;DR: Investigations on WS2 monolayer based phototransistors with and without decoration of SnSe nanocrystals (NCs) for comparison show that SnSe NCs decoration leads to not only huge enhancement of photoresponse in visible spectrum but also extension to near-infrared.
Abstract: Single-layer WS2 has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band-gap-limited spectral selectivity. Here we have carried out investigations on WS2 monolayer based phototransistors with and without decoration of SnSe nanocrystals (NCs) for comparison. Compared to the solely WS2 monolayer, SnSe NCs decoration leads to not only huge enhancement of photoresponse in visible spectrum but also extension to near-infrared. Under excitation of visible light in a vacuum, the responsivity at zero gate bias can be enhanced by more than 45 times to ∼99 mA/W, and the response time is retained in millisecond level. Particularly, with extension of photoresponse to near-infrared (1064 nm), a responsivity of 6.6 mA/W can be still achieved. The excellent photoresponse from visible to near-infrared is considered to benefit from synergism of p-type SnSe NCs and n-type WS2 monolayer, or in other words, the...

91 citations

Journal ArticleDOI
TL;DR: In this article, a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer was developed.
Abstract: We have developed a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer. Effects of thermal annealing in an argon ambient on the electrical and photoresponse properties were investigated. Annealing at temperatures up to 550°C improves the rectifying current-voltage characteristics, resulting in a dramatic enhancement of DUV responsivity at 220nm by a factor of 4×103. A blind ratio as large as 105 between DUV and visible light has been achieved at a reverse bias as small as 1V. Development of the thermally stable WC-based Schottky and ohmic contacts provides a route for stable operation of a diamond photodetector at high temperatures.

91 citations

Journal ArticleDOI
TL;DR: In this paper, an evanescently coupled photodiode that utilizes a short planar multimode waveguide was reported with very high responsivity with polarization dependence less than 0.5 dB, 48 GHz bandwidth, and 11-mA saturation current.
Abstract: We report an evanescently coupled photodiode that utilizes a short planar multimode waveguide. Very high responsivity (> 1 A/W) with polarization dependence less than 0.5 dB, 48-GHz bandwidth, and 11-mA saturation current were achieved.

91 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653