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Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: In this paper, the authors demonstrate that a quantum well infrared photodetector based on bound-to-continuum state intersubband transitions can have a photoconductive gain much greater than unity similar to extrinsic photoconductors.
Abstract: We demonstrate for the first time that a quantum well infrared photodetector based on bound‐to‐continuum state intersubband transitions can have a photoconductive gain much greater than unity similar to extrinsic photoconductors. An optical gain g=8.1 was determined by comparing the optical absorption, responsivity, and noise characteristics of two multiquantum well detectors which were identical in every respect except for having a different number of periods (2 and 20). The results suggest that since the photocarrier lifetime τL is not transit time limited, detector optimization to increase τL or optical coupling can be expected to lead to an improved detectivity D*.
89 citations
TL;DR: In this article, self-assembled InAs-InGaAs-GaAs quantum dots are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs).
Abstract: Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times1010 Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature
89 citations
TL;DR: This work provides a simple, low-cost, and effective method for preparing millimeter-level CsPbBr3 single crystals and provides a promising approach for fabricating high-performance self-powered photodetectors.
Abstract: Millimeter-sized CsPbBr3 single crystals were prepared via a facile solvent-evaporation method in ambient environment. The heterojunction between p-type CuI and n-type CsPbBr3 was formed by a simple immersion process. The as-integrated CsPbBr3/CuI device exhibits a good rectifying behavior (ratio of 250 at ±2 V). In particular, the photodetector shows excellent self-powered characteristics under 540 nm light illumination, including high photocurrent (near 100 nA); high photosensitivity (on/off ratio of 1.5 × 103); fast response speed (0.04/2.96 ms); and good wavelength selectivity (565-525 nm), responsivity (1.4 mA W-1), and detectivity (6.2 × 1010 Jones). This work provides a simple, low-cost, and effective method for preparing millimeter-level CsPbBr3 single crystals. The simple device architecture further provides a promising approach for fabricating high-performance self-powered photodetectors.
89 citations
TL;DR: In this article, a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5Pb 0.5Sn 0.6I3, which is processed with an antioxidant additive, ascorbic acid (AA).
Abstract: Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.
89 citations
TL;DR: For the first time, the perovskite-based photodetector is demonstrated to extend its detection capability to IR (>1000 nm) with high room temperature responsivity across the detected spectrum, leading to a high-performance ingenious cost-effective UV-to-IR broadband photodetsector design for large-scale applications.
Abstract: A high-performance vertically injected broadband UV-to-IR photodetector based on Gd-doped ZnO nanorods (NRs)/CH3NH3PbI3 perovskite heterojunction was fabricated on metal substrates. Our perovskite-based photodetector is sensitive to a broad spectral range, from ultraviolet to infrared light region (λ = 250–1357 nm). Such structure leads to a high photoresponsivity of 28 and 0.22 A/W, for white light and IR illumination, respectively, with high detectivity values of 1.1 × 1012 and 9.3 × 109 Jones. Optical characterizations demonstrate that the IR detection is due to intraband transition in the perovskite material. Metal substrate boosts carrier injection, resulting in higher responsivity compared to the conventional devices grown on glass, whereas the presence of Gd increases the ZnO NRs performance. For the first time, the perovskite-based photodetector is demonstrated to extend its detection capability to IR (>1000 nm) with high room temperature responsivity across the detected spectrum, leading to a hig...
89 citations