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Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


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Journal ArticleDOI
Min Cao1, Jiyu Tian1, Zhi Cai1, Lan Peng1, Lei Yang1, Dacheng Wei1 
TL;DR: In this paper, a photodetector made of the as-prepared perovskite heterojunction is presented, which exhibits a wavelength-dependent responsivity with a peak responsivity up to 11.5 µm/W−1 under 450 nm irradiation at zero bias, which is one order of magnitude higher than the CH3NH3PbBr3 single crystal.
Abstract: Perovskite single crystals exhibit extraordinary optoelectronic performances due to their advantages such as low trap-state densities, long carrier diffusion, and large absorption coefficient, and thus, photodetectors based on perovskite single crystals have attracted much research interest. Unlike the reported one-component single-crystal perovskite photodetectors, here, we have developed a facile two-step approach to fabricate a core-shell heterojunction based on the CH3NH3PbBr3 single crystal. A photodetector made of the as-prepared perovskite heterojunction renders the feature of self-power attributed to a built-in electric field in the junction and exhibits a wavelength-dependent responsivity with a peak responsivity up to 11.5 mA W−1 under 450 nm irradiation at zero bias, which is one order of magnitude higher than the CH3NH3PbBr3 single crystal and shows a maximum external quantum efficiency of 3.17%, also higher than the reported 0.2% of the CH3NH3PbBr3 single crystal. Our work may lead to more ef...

84 citations

Journal ArticleDOI
28 Jan 2014-ACS Nano
TL;DR: In this work, single-crystalline p-type Cd3P2 nanowires (NWs) were synthesized on a Cd sheet via a facile chemical vapor deposition method, and field-effect transistors and high-performance photodetectors were fabricated based on these NWs, exhibiting high performance and flexibility.
Abstract: In this work, single-crystalline p-type Cd3P2 nanowires (NWs) were synthesized on a Cd sheet via a facile chemical vapor deposition method. Then field-effect transistors and high-performance photodetectors were fabricated based on these NWs. It was found that hole mobility of a pristine Cd3P2 NW is around 2.94 cm(2) V(-1) s(-1). Meanwhile, high responsivity and photoconductive gain were observed on these devices across a broad spectral range covering UV-visible to NIR with high stability and reproducibility. Furthermore, hybrid organic-inorganic n-type phenyl-C61-butyric acid methyl ester (PCBM) and p-type Cd3P2 NW heterojunction photodetectors were also fabricated, exhibiting much improved photocurrent and photoconductive gain, as compared to the device made of pristine Cd3P2 NWs. Intriguingly, the flexible hybrid photodetectors have been fabricated on plastic substrates and characterized under various bending conditions, demonstrating their excellent flexibility and robustness. The high performance and flexibility of the hybrid photodetectors are promising for further applications requiring large-area, high-sensitivity, and high-speed photodetectors with broad-spectrum photoresponse.

84 citations

Journal ArticleDOI
Jin-Wei Shi1, Y.-S. Wu1, C.-Y. Wu1, P.-H. Chiu1, C.-C. Hong 
TL;DR: In this article, the authors demonstrate a near-ballistic uni-traveling-carrier photodiode (UTC-PD) at a 1.55-mm wavelength.
Abstract: In this letter, we demonstrate a novel photodiode at a 1.55-/spl mu/m wavelength: the near-ballistic uni-traveling-carrier photodiode (UTC-PD). After a p/sup +/ delta-doped layer was inserted into the collector of a UTC-PD, near-ballistic transport of photogenerated electrons under high reverse bias voltage (-5 V) and a high output photocurrent (/spl sim/30 mA) was observed. The demonstrated device has been combined with an evanescently coupled optical waveguide to attain high responsivity and high saturation power performance. Extremely high responsivity (1.14 A/W), a high electrical bandwidth (around 40 GHz), and a high saturation current-bandwidth product (over 1280 mA/spl middot/GHz, at 40 GHz) with high saturation radio-frequency power (over 12 dBm at 40 GHz) have been achieved simultaneously at a 1.55-/spl mu/m wavelength.

84 citations

Journal ArticleDOI
Gadi Eisenstein1, L.W. Stulz1
TL;DR: High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride and similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.
Abstract: Single-layer antireflection (AR) coating films are used to transform semiconductor injection lasers into different kinds of active device. For example, a laser whose emitting facet reflectivities (one or both) are reduced to zero is transformed into a superluminescent diode or an optical amplifier, respectively. AR coated lasers are also very desirable in various configurations of a laser in an external cavity or as sources for optical fiber sensor applications. High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride. The emitting facets of InGaAsP lasers at 1.3 and 1.55 μm as well as of AlGaAs lasers at 0.85 μm were coated. The reflectivities achieved were consistently in the 0.01–0.03% range. Similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.

84 citations

Journal ArticleDOI
TL;DR: A tunable micro-ring resonator integrated monolithically with a photodiode in a silicon waveguide device leads to the possibility of extremely small detector geometries in silicon photonics with no requirement for the use of III-V materials or germanium.
Abstract: We describe, model and demonstrate a tunable micro-ring resonator integrated monolithically with a photodiode in a silicon waveguide device. The photodiode is made sensitive to wavelengths at and around 1550nm via the introduction of lattice damage through selective ion implantation. The ring resonator enhances detector responsivity in a 60 μm long waveguide photodiode such that it is 0.14 A/W at −10Vbias with less than 0.2 nA leakage current. The device is tunable such that resonance (and thus detection) can be achieved at any wavelength from 1510 – 1600 nm. We also demonstrate use of the device as a digital switch with integrated power monitoring, 20 dB extinction, and no optical power tapped from the output path to the photodiode. A theoretical description suggests that for a critically coupled resonator where the round trip loss is dominated by the excess defects used to mediate detection, the maximum responsivity is independent of device length. This leads to the possibility of extremely small detector geometries in silicon photonics with no requirement for the use of III-V materials or germanium.

84 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653