Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, a thin metal film, impedance matched to free space, and a quarter-wave polymer film was described as a thermal absorber for infrared thermal detectors, which offers an acceptably low thermal mass.
Abstract: Imaging thermal detector technology is a rapidly advancing field in which the current emphasis is towards the development of very large arrays of very small pyroelectric detector elements. For maximum responsivity, each of the thin pyroelectric elements (typically ≤25 μm thick) in an array must be provided with a thermal absorber to convert incoming infrared radiation into heat. This absorber must have a low thermal mass compared to the element and a high absorption efficiency to give the maximum responsivity. This paper describes one such absorber structure, comprising a thin metal film, impedance matched to free space, and a quarter‐wave polymer film which offers an acceptably low thermal mass. The structure and properties of this thin‐film absorber are compared with those of an electroplated platinum black absorber commonly used in thermal detectors. The theory of the absorber is presented and good agreement is shown between calculated and experimentally derived absorption spectra. Processing methods a...
84 citations
TL;DR: Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported in this paper, which have an abrupt longwavelength cutoff wavelength at ~370 nm and responsivity values as high as 0.09 A/W at 360 nm.
Abstract: Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long-wavelength cutoff wavelength at ~370 nm and responsivity values as high as 0.09 A/W at 360 nm. The rise and fall times were measured to be 300 µs at 325 nm.
84 citations
TL;DR: In this article, a photodetector with a maximum photoresponse of 3.63 A W−1 at 310 nm with a sharp cutoff wavelength at 380 nm was presented.
Abstract: Epitaxial TiO2 thin films were fabricated on LaAlO3 single crystal substrates by RF magnetron sputtering. Ag electrodes were then evaporated on the TiO2 thin films to form metal–semiconductor–metal photoconductive detectors. The TiO2 photodetector exhibited a maximum photoresponse of 3.63 A W−1 at 310 nm with a sharp cutoff wavelength at 380 nm. The ultraviolet (UV)–visible response rejection ratio (R310 nm/R390 nm) was about three orders of magnitude. The photocurrent response of the detectors scaled linearly with the applied bias and the incident light intensity. The dark current was only 0.14 nA at 10 V bias. A transient photovoltage with a rise time of ~8 ns and a full-width at half-maximum of ~90 ns was observed when the photodetector was under the irradiation of a 308 nm XeCl laser with 25 ns duration. The excellent performances of high responsivity and ultrahigh response speed suggest that the presented TiO2 detectors have promising potential in UV photodetection.
84 citations
IBM1
TL;DR: In this paper, a high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- Omega output buffer stage has been fabricated using an enhancement/depletion 0.35- mu m recessed-gate GaAs MESFET process.
Abstract: A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- Omega output buffer stage has been fabricated using an enhancement/depletion 0.35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Omega into a 50- Omega load, which corresponds to a transimpedance bandwidth product of 1.5 THz- Omega . >
83 citations
TL;DR: In this article, a photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2 was proposed.
Abstract: The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron–hole pairs (excitons) extends onto the whole 1L–2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMD p–n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
83 citations